DMG3N60SJ3
For Reference Only
| Part Number | DMG3N60SJ3 |
| PNEDA Part # | DMG3N60SJ3 |
| Description | MOSFET BVDSS: 501V 650V TO251 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 8,568 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMG3N60SJ3 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMG3N60SJ3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
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DMG3N60SJ3 Specifications
| Manufacturer | Diodes Incorporated |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 354pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 |
| Package / Case | TO-251-3, IPak, Short Leads |
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Manufacturer IXYS Series TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3060pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
