Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 446/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251 |
6,462 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 4.5V, 10V | 125mOhm @ 8A, 10V | - | 20nC @ 10V | ±20V | 900pF @ 10V | - | 1W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia |
MOSFET N-CH 100V 85A LFPAK56 |
5,058 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Ta) | 5V, 10V | 11.9mOhm @ 25A, 10V | 2.1V @ 1mA | 118nC @ 10V | ±20V | 7973pF @ 25V | - | 238W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK |
8,406 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK |
7,218 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 9A 8SOP |
8,856 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 9A (Ta) | 4.5V, 10V | 15mOhm @ 4.5A, 10V | 2V @ 500µA | 64nC @ 10V | +20V, -25V | 2900pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO262F |
7,830 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.3Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 640pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB |
6,876 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO220F |
2,016 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.56Ohm @ 3.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 1060pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 14A SQ |
3,780 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 14nC @ 4.5V | ±20V | 1430pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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ON Semiconductor |
MOSFET N-CH 30V 26A PT8 |
4,590 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 49A (Tc) | 4.5V, 10V | 2.4mOhm @ 26A, 10V | 3V @ 1mA | 57nC @ 10V | ±20V | 3550pF @ 15V | - | 2.5W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 100A D2PAK |
6,516 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 25A, 10V | 2.8V @ 1mA | 78nC @ 10V | ±16V | 4707pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 13.5A |
5,760 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 13.5A (Ta), 100A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 3V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.6W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 60V 60A TO252 |
5,202 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 12mOhm @ 25A, 10V | 3V @ 250µA | 35.2nC @ 10V | ±20V | 1926pF @ 30V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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ON Semiconductor |
MOSFET N-CH 250V 8.1A TO-220 |
3,276 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 4.05A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1000pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
6,894 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 9400pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
8,838 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 12.2mOhm @ 60A, 10V | 3.5V @ 46µA | 34nC @ 10V | ±20V | 2470pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SMALL SIGNAL+P-CH |
2,916 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 25V 16.7A 8-PQFN |
6,516 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 16.7A (Ta), 49A (Tc) | 4.5V, 10V | 5mOhm @ 16.7A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1795pF @ 13V | - | 2.3W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 40V 50A TO252 |
3,492 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 10mOhm @ 50A, 10V | 4V @ 250µA | 25.5nC @ 10V | 20V | 1405pF @ 20V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 200V 9A IPAK |
8,496 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 910pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 100V 48A 8DFN |
7,848 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 4.5V, 10V | 7.9mOhm @ 20A, 10V | 2.3V @ 250µA | 60nC @ 10V | ±20V | 3130pF @ 50V | - | 108W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
4,068 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1200pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 46A SO8FL |
4,194 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 100V D2PAK TO-263 |
3,546 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET NCH 40V 30A POWER56 |
4,698 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 10V | 7mOhm @ 30A, 10V | 3V @ 250µA | 28nC @ 10V | ±20V | 1210pF @ 20V | - | 50W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 3A DPAK-3 |
4,608 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Ta) | 10V | 3Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7nC @ 10V | ±30V | 280pF @ 25V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 75A DFN |
5,796 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta), 75A (Tc) | 4.5V, 10V | 1.25mOhm @ 20A, 10V | 2V @ 250µA | 140nC @ 10V | ±20V | 4500pF @ 15V | - | 4.1W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 1A SAWN ON FOIL |
6,408 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1A (Tj) | 4.5V, 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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ON Semiconductor |
MOSFET N-CH 500V 6A IPAK |
2,520 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 940pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 44A DPAK |
3,024 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |