Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 351/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
6,840 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A |
4,590 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56nC @ 10V | ±25V | 2500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 11A TO-220 |
5,184 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | ±30V | 1630pF @ 25V | - | 150W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1.2KV 3A TO-220AB |
7,632 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 3A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 5V @ 250µA | 42nC @ 10V | ±20V | 1350pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 80A TO220AB |
6,768 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 80A (Tc) | 10V | 16mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83nC @ 10V | ±20V | 5430pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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IXYS |
MOSFET N-CH 2000V 1A TO-263HV |
5,076 |
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- | N-Channel | MOSFET (Metal Oxide) | 2000V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5nC @ 10V | ±20V | 646pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 11A TO-247 |
8,244 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | ±30V | 1630pF @ 25V | - | 150W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 48A TO220 |
7,506 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
4,032 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 900 V, 0.24 OHM TYP., |
6,138 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 100V 180A TO-220 |
8,568 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.7mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | ±20V | 12800pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 52A TO247 |
2,574 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 55mOhm @ 26A, 10V | 4V @ 250µA | 91nC @ 10V | ±25V | 3750pF @ 100V | - | 350W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N CH 80V 180A TO220 |
4,806 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 2.5mOhm @ 90A, 10V | 4V @ 250µA | 193nC @ 10V | ±20V | 13600pF @ 50V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 10A TO-247 |
4,536 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 10A (Tc) | 18V | 585mOhm @ 3A, 18V | 4V @ 900µA | 27nC @ 18V | +22V, -6V | 463pF @ 800V | - | 85W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 96A TO247AC |
4,500 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 96A (Tc) | 10V | 12mOhm @ 58A, 10V | 4V @ 270µA | 203nC @ 10V | ±20V | 9915pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
HIGH POWER_NEW |
3,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 55mOhm @ 18A, 10V | 4.5V @ 900µA | 79nC @ 10V | ±20V | 3194pF @ 400V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A TO-3PF |
6,966 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | ±25V | 2500pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET N-CH 600V 29A TO-247 |
8,838 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | ±25V | 2785pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 45.8A TO-247 |
3,402 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 45.8A (Tc) | 10V | 65mOhm @ 23.5A, 10V | 4V @ 250µA | 157nC @ 10V | ±30V | 6120pF @ 100V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 60V 0.41A TO39-3 |
6,516 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 410mA (Ta) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 24V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Infineon Technologies |
HIGH POWER_NEW |
7,200 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4.5V @ 1.25mA | 109nC @ 10V | ±20V | 4354pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO220-3 |
5,940 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 120A TO-264 |
7,362 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 500µA | 185nC @ 10V | ±20V | 8000pF @ 25V | - | 700W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 2500V 0.2A TO247 |
7,074 |
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- | N-Channel | MOSFET (Metal Oxide) | 2500V | 200mA (Tc) | 10V | 450Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4nC @ 10V | ±20V | 116pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CHANNEL 950V 38A TO247 |
3,544 |
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MDmesh™ DK5 | N-Channel | MOSFET (Metal Oxide) | 950V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 100nC @ 10V | ±30V | 3480pF @ 100V | - | 450W (Tc) | -55°C ~ 150°C | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 170A TO247 |
7,668 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190nC @ 10V | ±20V | 13500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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IXYS |
300V/150A ULTRA JUNCTION X3-CLAS |
4,968 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 8.3mOhm @ 75A, 10V | 4.5V @ 4mA | 254nC @ 10V | ±20V | 13.1nF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET P-CH 200V 90A PLUS247 |
3,996 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 44mOhm @ 22A, 10V | 4V @ 1mA | 205nC @ 10V | ±20V | 12000pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 64A TO-264 |
8,874 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200nC @ 10V | ±30V | 12000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 180A TO-264AA |
6,498 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 390nC @ 10V | ±20V | 10900pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |