Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SCT2450KEC

SCT2450KEC

For Reference Only

Part Number SCT2450KEC
PNEDA Part # SCT2450KEC
Description MOSFET N-CH 1200V 10A TO-247
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SCT2450KEC Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberSCT2450KEC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SCT2450KEC, SCT2450KEC Datasheet (Total Pages: 14, Size: 779.42 KB)
PDFSCT2450KEC Datasheet Cover
SCT2450KEC Datasheet Page 2 SCT2450KEC Datasheet Page 3 SCT2450KEC Datasheet Page 4 SCT2450KEC Datasheet Page 5 SCT2450KEC Datasheet Page 6 SCT2450KEC Datasheet Page 7 SCT2450KEC Datasheet Page 8 SCT2450KEC Datasheet Page 9 SCT2450KEC Datasheet Page 10 SCT2450KEC Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SCT2450KEC Datasheet
  • where to find SCT2450KEC
  • Rohm Semiconductor

  • Rohm Semiconductor SCT2450KEC
  • SCT2450KEC PDF Datasheet
  • SCT2450KEC Stock

  • SCT2450KEC Pinout
  • Datasheet SCT2450KEC
  • SCT2450KEC Supplier

  • Rohm Semiconductor Distributor
  • SCT2450KEC Price
  • SCT2450KEC Distributor

SCT2450KEC Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 18V
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds463pF @ 800V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

The Products You May Be Interested In

TK4A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

IPU039N03LGXK

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI3443DDV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Ta), 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

47mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 8V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

CEDM8004 TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 430mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.88nC @ 4.5V

Vgs (Max)

8V

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 25V

FET Feature

-

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-883VL

Package / Case

SC-101, SOT-883

2SK3708

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

33mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

73nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 20V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ML

Package / Case

TO-220-3 Full Pack

Recently Sold

AUIRF2804S

AUIRF2804S

Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

NVMFS5A160PLZT1G

NVMFS5A160PLZT1G

ON Semiconductor

-60V7.7MOHMSINGLE

NHD-0420CW-AW3

NHD-0420CW-AW3

Newhaven Display Intl

4X20 WHITE SLIM CHARACTER OLED

AT25M01-SSHM-T

AT25M01-SSHM-T

Microchip Technology

IC EEPROM 1M SPI 20MHZ 8SOIC

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812

MCP41010T-I/SN

MCP41010T-I/SN

Microchip Technology

IC DGTL POT 10KOHM 256TAP 8SOIC

ADM2491EBRWZ

ADM2491EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

MCP6002-E/SN

MCP6002-E/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

SMBJ5.0CA-13-F

SMBJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMB

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

B340A-E3/61T

B340A-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AC