Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 334/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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IXYS |
MOSFET N-CH 55V 440A TO-268 |
8,316 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 440A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 250µA | 405nC @ 10V | ±20V | 25000pF @ 25V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS-RF |
MOSFET N-CH 1000V 12A TO268 |
6,384 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 77nC @ 10V | ±20V | 2700pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 30A TO-268 |
8,082 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 4.5V @ 250µA | 240nC @ 10V | ±20V | 8100pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 120A TO-247 |
5,274 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 27mOhm @ 60A, 10V | 5V @ 4mA | 150nC @ 10V | ±20V | 8630pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 200V 68A TO-247 |
5,994 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 68A (Tc) | 10V | 55mOhm @ 34A, 10V | 4V @ 250µA | 380nC @ 10V | ±15V | 33400pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
5,778 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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IXYS |
MOSFET N-CH 200V 60A TO-3P |
8,082 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255nC @ 10V | ±20V | 10500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 1000V 15A TO-268 |
7,038 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 1.05Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64nC @ 10V | ±30V | 3250pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 100V 110A TO-247 |
5,544 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 18mOhm @ 500mA, 10V | 4.5V @ 250µA | 260nC @ 10V | ±20V | 10500pF @ 25V | - | 600W (Tc) | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 60A TO268 |
6,252 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255nC @ 10V | ±20V | 10500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1000V 10A ISOPLUS247 |
5,922 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 1.2Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64nC @ 10V | ±30V | 3250pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 150A TO-247 |
7,200 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 19mOhm @ 75A, 10V | 5V @ 8mA | 197nC @ 10V | ±20V | 12100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 150A TO-264 |
6,588 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 19mOhm @ 75A, 10V | 5V @ 8mA | 197nC @ 10V | ±20V | 12100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 25A ISOPLUS247 |
6,336 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 25A (Tc) | 10V | 154mOhm @ 22A, 10V | 6.5V @ 4mA | 93nC @ 10V | ±30V | 4800pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 90A PLUS247 |
8,190 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 10000pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
500V POLAR2 HIPERFETS |
8,352 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 68A (Tc) | 10V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 220nC @ 10V | ±30V | 13700pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 48A PLUS247 |
5,742 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 140mOhm @ 24A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 7020pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 24A PLUS247 |
4,374 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 24A (Tc) | 10V | 440mOhm @ 12A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 7200pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 64A PLUS247 |
5,544 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 6.5V @ 4mA | 145nC @ 10V | ±30V | 6950pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 200V 120A TO-264 |
5,058 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 120A (Tc) | - | 30mOhm @ 60A, 10V | 4.5V @ 250µA | 740nC @ 10V | - | 73000pF @ 25V | - | - | - | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 32A TO-264 |
6,432 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 6940pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 64A TO-264 |
4,824 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 6.5V @ 4mA | 145nC @ 10V | ±30V | 6950pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 300V 210A PLUS264 |
5,526 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 300V | 210A (Tc) | 10V | 14.5mOhm @ 105A, 10V | 5V @ 8mA | 268nC @ 10V | ±20V | 16200pF @ 25V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 63A ISOPLUS264 |
6,084 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 63A (Tc) | 10V | 43mOhm @ 66A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18600pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ |
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Microsemi |
MOSFET N-CH 1200V 24A T-MAX |
8,694 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 24A (Tc) | 10V | 630mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8370pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 800V 32A PLUS247 |
6,360 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 6940pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 45A ISOPLUS247 |
8,298 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 145nC @ 10V | ±30V | 6950pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 70A TO-247 |
7,398 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 2000V 3A TO-247 |
6,348 |
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- | N-Channel | MOSFET (Metal Oxide) | 2000V | 3A (Tc) | 10V | 8Ohm @ 1.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±20V | 1860pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 32A PLUS247 |
4,279 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | ±30V | 9940pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |