Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 332/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK |
7,434 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 4mOhm @ 40A, 10V | 1V @ 250µA | 110nC @ 4.5V | ±20V | 5500pF @ 25V | - | 300W (Tc) | -60°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 120A D2PAK |
8,010 |
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Automotive, AEC-Q101, STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4.6mOhm @ 50A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 5100pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
R6018JNJ IS A POWER MOSFET FOR S |
2,394 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 15V | 286mOhm @ 9A, 15V | 7V @ 4.2mA | 42nC @ 15V | ±30V | 1300pF @ 100V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 16A TO-220 |
6,768 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 470mOhm @ 500mA, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1830pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 24A TO-263 |
6,210 |
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PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 270mOhm @ 12A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2890pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH |
4,698 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36nC @ 10V | ±30V | 2060pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6 |
2,628 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 60A, 10V | 4.5V @ 250µA | 160nC @ 10V | ±20V | 11550pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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STMicroelectronics |
MOSFET N-CH 500V 14A D2PAK |
4,284 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92nC @ 10V | ±30V | 2000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 330V 25A D2PAK |
5,130 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 330V | 25A (Tc) | 10V | 230mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 15V | ±30V | 2010pF @ 25V | - | 3.1W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 24A TO-3 |
7,290 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 200mOhm @ 12A, 10V | 5V @ 250µA | 85nC @ 10V | ±30V | 4310pF @ 25V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A LPT |
7,236 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 280mOhm @ 10A, 10V | 5V @ 1mA | 60nC @ 10V | ±30V | 2350pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 16A TO247 |
6,636 |
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PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 330mOhm @ 8A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±30V | 2530pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 86A TO-263 |
4,140 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 86A (Tc) | 10V | 29mOhm @ 500mA, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 4500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 60A D2PAK |
7,920 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 3.9mOhm @ 20A, 10V | 3V @ 250µA | 50nC @ 4.5V | ±20V | 5950pF @ 10V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 20A POWER MOSFET; R6020 |
2,448 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45nC @ 15V | ±30V | 1500pF @ 100V | - | 252W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 900V 8A D2PAK |
2,934 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | 1.3Ohm @ 3.6A, 10V | 4.5V @ 100µA | 72nC @ 10V | ±30V | 2115pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 18.5A TO-3P |
6,462 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 18.5A (Tc) | 10V | 380mOhm @ 9.3A, 10V | 5V @ 250µA | 90nC @ 10V | ±30V | 3600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Rohm Semiconductor |
MOSFET N-CH 250V 51A TO-220FM |
21,156 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 51A (Ta) | 10V | - | - | - | ±30V | - | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHAN 650V 12A POWERPAK |
5,778 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 363mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | ±30V | 1257pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Rohm Semiconductor |
R8008ANJ FRG IS A POWER MOSFET W |
3,582 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.03Ohm @ 4A, 10V | 5V @ 1mA | 38nC @ 10V | ±30V | 1100pF @ 25V | - | 195W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
120V/110A TRENCHT2 POWER MOSFET |
7,344 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 120V | 110A (Tc) | 10V | 14mOhm @ 55A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 6570pF @ 25V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 60V 22A POLARPAK |
7,290 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 6mOhm @ 11A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 2500pF @ 25V | - | 5.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PolarPak® | PolarPak® |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO247 |
5,526 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 28A TO3P |
7,938 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 260mOhm @ 14A, 10V | 5V @ 2.5mA | 50nC @ 10V | ±30V | 3560pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CHANNEL 250V 30A TO220 |
6,372 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Tc) | 10V | 60mOhm @ 15A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1450pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CHANNEL 250V 30A TO263 |
8,802 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Tc) | 10V | 60mOhm @ 15A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1450pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
8,280 |
|
Automotive, AEC-Q101, STripFET™ F3 | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.5mOhm @ 60A, 10V | 4V @ 250µA | 114.6nC @ 10V | ±20V | 6665pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 11A D2PAK |
8,946 |
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FDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 900pF @ 25V | - | 160W (Tc) | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6 |
2,592 |
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Automotive, AEC-Q101, STripFET™ F3 | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.5mOhm @ 60A, 10V | 4V @ 250µA | 114.6nC @ 10V | ±20V | 6665pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A I2PAK |
7,578 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |