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FQA19N60

FQA19N60

For Reference Only

Part Number FQA19N60
PNEDA Part # FQA19N60
Description MOSFET N-CH 600V 18.5A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA19N60 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA19N60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA19N60, FQA19N60 Datasheet (Total Pages: 10, Size: 1,810.2 KB)
PDFFQA19N60 Datasheet Cover
FQA19N60 Datasheet Page 2 FQA19N60 Datasheet Page 3 FQA19N60 Datasheet Page 4 FQA19N60 Datasheet Page 5 FQA19N60 Datasheet Page 6 FQA19N60 Datasheet Page 7 FQA19N60 Datasheet Page 8 FQA19N60 Datasheet Page 9 FQA19N60 Datasheet Page 10

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FQA19N60 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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