Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 293/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A ITO220 |
19,692 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CHANNEL 650V 7A TO220 |
6,924 |
|
E | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 1640pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 6A ITO220 |
20,808 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 691pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A ITO220 |
23,424 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO220-3 |
21,084 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 12A TO220 |
8,184 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 12A TO263 |
7,332 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58nC @ 10V | ±30V | 937pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 56A TO-220 |
6,024 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Tc) | 10V | 7.5mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | ±20V | 4200pF @ 60V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 500 V, 0.299 OHM TYP., |
13,332 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 350mOhm @ 5.5A, 10V | 5V @ 250µA | 16nC @ 10V | ±25V | 628pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 11A TO220F |
13,176 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2nC @ 10V | ±30V | 646pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 7A TO220 |
7,548 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | ±20V | 390pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-251 |
17,628 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 14A TO220 |
18,648 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 440mOhm @ 7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2263pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Nexperia |
MOSFET N-CH 60V SOT78 |
6,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 3.9mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | ±20V | 5600pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14.5A TO-220AB |
21,324 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66nC @ 10V | ±30V | 1162pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF |
5,472 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 274A (Tc) | 4.5V, 10V | 2.6mOhm @ 100A, 10V | 2.3V @ 250µA | 132nC @ 10V | ±20V | 11400pF @ 15V | - | 250W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 120V 75A TO220-3 |
8,088 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 75A (Tc) | 10V | 11.4mOhm @ 75A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4310pF @ 60V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 14A ITO220 |
23,604 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 440mOhm @ 7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2263pF @ 25V | - | - | 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 100V 25A TO-220FP |
20,496 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 35mOhm @ 12.5A, 10V | 4.5V @ 250µA | 14nC @ 10V | ±20V | 920pF @ 50V | - | 25W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 900V 6A TO-220 |
8,976 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 2.3Ohm @ 3A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1770pF @ 25V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 5.6A TO220FP |
18,792 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 5.6A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET P-CH 100V 5.2A TO220FP |
14,124 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.2A (Tc) | 10V | 600mOhm @ 3.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7,776 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 66µA | 53nC @ 10V | ±20V | 3770pF @ 40V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A ITO220 |
23,268 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A TO220 |
19,440 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 13A TO220AB |
18,360 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 1205pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 13A TO220 |
21,276 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 1205pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
23,016 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 80A TO-220AB |
7,614 |
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Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.3mOhm @ 40A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 3850pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-262 |
7,722 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |