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SIHA6N65E-E3

SIHA6N65E-E3

For Reference Only

Part Number SIHA6N65E-E3
PNEDA Part # SIHA6N65E-E3
Description MOSFET N-CHANNEL 650V 7A TO220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,924
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHA6N65E-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHA6N65E-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHA6N65E-E3, SIHA6N65E-E3 Datasheet (Total Pages: 7, Size: 149.41 KB)
PDFSIHA6N65E-E3 Datasheet Cover
SIHA6N65E-E3 Datasheet Page 2 SIHA6N65E-E3 Datasheet Page 3 SIHA6N65E-E3 Datasheet Page 4 SIHA6N65E-E3 Datasheet Page 5 SIHA6N65E-E3 Datasheet Page 6 SIHA6N65E-E3 Datasheet Page 7

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SIHA6N65E-E3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1640pF @ 100V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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