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STP120N4F6

STP120N4F6

For Reference Only

Part Number STP120N4F6
PNEDA Part # STP120N4F6
Description MOSFET N-CH 40V 80A TO-220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,614
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP120N4F6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP120N4F6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP120N4F6, STP120N4F6 Datasheet (Total Pages: 19, Size: 1,091.85 KB)
PDFSTB120N4F6 Datasheet Cover
STB120N4F6 Datasheet Page 2 STB120N4F6 Datasheet Page 3 STB120N4F6 Datasheet Page 4 STB120N4F6 Datasheet Page 5 STB120N4F6 Datasheet Page 6 STB120N4F6 Datasheet Page 7 STB120N4F6 Datasheet Page 8 STB120N4F6 Datasheet Page 9 STB120N4F6 Datasheet Page 10 STB120N4F6 Datasheet Page 11

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STP120N4F6 Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3850pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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