Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 188/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 650V 28A TO-220 |
11,652 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2700pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 27A TO-247 |
8,088 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 27A (Tc) | 10V | 115mOhm @ 13.5A, 10V | 4V @ 250µA | 94nC @ 10V | ±25V | 2740pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 42A TO-247 |
14,448 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 70mOhm @ 21A, 10V | 4V @ 250µA | 70nC @ 10V | ±25V | 3060pF @ 100V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO247AC |
8,568 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | ±30V | 9620pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 27A TO-247 |
21,444 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 27A (Tc) | 10V | 98mOhm @ 13.5A, 10V | 5V @ 250µA | 83nC @ 10V | ±25V | 3750pF @ 100V | - | 160W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
SUPERFET3 650V TO247 |
9,936 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 6.5mA | 158nC @ 10V | ±30V | 5940pF @ 400V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A EP TO220AB |
7,536 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 87mOhm @ 17A, 10V | 4.75V @ 250µA | 55nC @ 10V | ±25V | 2370pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 35A TO247 |
8,112 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78mOhm @ 17.5A, 10V | 5V @ 250µA | 82nC @ 10V | ±25V | 3470pF @ 100V | - | 210W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 650V 76A TO247 |
18,912 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298nC @ 10V | ±20V | 12560pF @ 100V | Super Junction | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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IXYS |
300V/100A ULTRA JUNCTION X3-CLAS |
9,732 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 100A (Tc) | 10V | 13.5mOhm @ 50A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7.66nF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 25A TO-247 |
6,384 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 130mOhm @ 12.5A, 10V | 4V @ 250µA | 91nC @ 10V | ±30V | 2700pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 24A TO-247 |
12,984 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72nC @ 10V | ±25V | 3320pF @ 100V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 47A TO-247 |
9,660 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 62mOhm @ 23.5A, 10V | 4V @ 250µA | 151nC @ 10V | ±30V | 6700pF @ 100V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
SUPERFET3 650V TO247 PKG |
9,756 |
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Automotive, AEC-Q101, SuperFET® III, FRFET® | N-Channel | MOSFET (Metal Oxide) | 650V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153nC @ 10V | ±30V | 5875pF @ 400V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 52A TO247 |
8,952 |
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Automotive, AEC-Q101, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 72mOhm @ 26A, 10V | 5V @ 250µA | 210nC @ 10V | ±20V | 6330pF @ 100V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 28A TO-247 |
21,588 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2700pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 48A |
17,364 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | 5V @ 250µA | 88nC @ 10V | ±25V | 4100pF @ 100V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
17,148 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 63A (Tc) | 10V | 39mOhm @ 32A, 10V | 5V @ 250µA | 126nC @ 10V | ±30V | 4369pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 60A TO247AC |
13,380 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 41mOhm @ 35A, 10V | 4V @ 250µA | 410nC @ 10V | ±20V | 5348pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 650V 76A |
9,468 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298nC @ 10V | ±20V | 12560pF @ 100V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-4 |
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Vishay Siliconix |
MOSFET N-CH 600V 60A TO247AC |
17,736 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 40mOhm @ 36.5A, 10V | 4V @ 250µA | 394nC @ 10V | ±30V | 5500pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
300V/120A ULTRA JUNCTION X3-CLAS |
8,736 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 11mOhm @ 60A, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 10.5nF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 70A TO-247AD |
11,292 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380nC @ 10V | ±30V | 7500pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Cree/Wolfspeed |
E-SERIES 900V, 65 MOHM, G3 SIC M |
16,920 |
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Automotive, AEC-Q101, E | N-Channel | SiCFET (Silicon Carbide) | 900V | 35A (Tc) | 15V | 84.5mOhm @ 20A, 15V | 3.5V @ 5mA | 30.4nC @ 15V | +18V, -8V | 660pF @ 600V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 78A TO247 |
22,290 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 78A (Tc) | 10V | 41mOhm @ 21.7A, 10V | 4V @ 250µA | 139nC @ 10V | ±30V | 6120pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Transphorm |
650 V 25 A GAN FET |
7,692 |
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TP65H070L | N-Channel | GaNFET (Gallium Nitride) | 650V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3nC @ 10V | ±20V | 600pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
650 V 25 A GAN FET |
8,796 |
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TP65H070L | N-Channel | GaNFET (Gallium Nitride) | 650V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3nC @ 10V | ±20V | 600pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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STMicroelectronics |
MOSFET N-CH 650V 42A I2PAK-3 |
7,512 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | ±25V | 4200pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 650V 46A TO-247 |
18,804 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 59mOhm @ 23A, 10V | 5V @ 250µA | 139nC @ 10V | ±25V | 6810pF @ 100V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
7,512 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 21A (Tc) | 18V | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38nC @ 18V | +22V, -4V | 460pF @ 500V | - | 103W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |