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SIHW70N60EF-GE3

SIHW70N60EF-GE3

For Reference Only

Part Number SIHW70N60EF-GE3
PNEDA Part # SIHW70N60EF-GE3
Description MOSFET N-CH 600V 70A TO-247AD
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 11,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHW70N60EF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHW70N60EF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHW70N60EF-GE3, SIHW70N60EF-GE3 Datasheet (Total Pages: 8, Size: 317.12 KB)
PDFSIHW70N60EF-GE3 Datasheet Cover
SIHW70N60EF-GE3 Datasheet Page 2 SIHW70N60EF-GE3 Datasheet Page 3 SIHW70N60EF-GE3 Datasheet Page 4 SIHW70N60EF-GE3 Datasheet Page 5 SIHW70N60EF-GE3 Datasheet Page 6 SIHW70N60EF-GE3 Datasheet Page 7 SIHW70N60EF-GE3 Datasheet Page 8

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SIHW70N60EF-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs38mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs380nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 100V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-247-3

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