Transistors - FETs, MOSFETs - Arrays
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Arrays
Records 3,829
Page 14/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MOSFET N/P-CH 40V 6.8A 8SO |
61,866 |
|
- | N and P-Channel | Logic Level Gate | 40V | 6.8A | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 37.6nC @ 10V | 1790pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Vishay Siliconix |
MOSFET N/P-CH 40V 6.8A 8SOIC |
240,156 |
|
TrenchFET® | N and P-Channel | Logic Level Gate | 40V | 6.8A, 5.8A | 35.5mOhm @ 5A, 10V | 3V @ 250µA | 20nC @ 10V | 640pF @ 20V | 3W, 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Diodes Incorporated |
MOSFET N/P-CH 40V 5.3A 8SO |
21,060 |
|
Automotive, AEC-Q101 | N and P-Channel Complementary | Standard | 40V | 5.3A | 45mOhm @ 3A, 10V | 1.8V @ 250µA | 37.56nC @ 10V | 1790.8pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 3.5A 8-SOIC |
35,256 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 3.5A | 100mOhm @ 1.8A, 10V | 3V @ 250µA | 15nC @ 10V | 320pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 6.3A/8.6A 8-SO |
262,740 |
|
PowerTrench®, SyncFET™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.3A, 8.6A | 28mOhm @ 6.3A, 10V | 3V @ 250µA | 15nC @ 10V | 610pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Infineon Technologies |
MOSFET N/P-CH 20V 8-SOIC |
28,866 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 20V | 5.2A, 4.3A | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Nexperia |
MOSFET 2N-CH 100V 8.5A 56LFPAK |
97,122 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 100V | 8.5A | 159mOhm @ 5A, 5V | 2.1V @ 1mA | 7.4nC @ 5V | 755pF @ 25V | 32W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
|
|
Vishay Siliconix |
MOSFET N-CHAN DUAL 60V SO-8 |
19,212 |
|
TrenchFET® | 2 N-Channel (Dual) | Standard | 60V | 5.2A (Ta), 6.1A (Tc) | 40.9mOhm @ 5.2A, 10V | 3V @ 250µA | 10nC @ 10V | 350pF @ 30V | 2W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
30,576 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 4.8A MICROFET |
78,138 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.8A | 40mOhm @ 4.8A, 10V | 3V @ 250µA | 5.6nC @ 5V | 465pF @ 15V | 750mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP, MicroFET (3x1.9) |
|
|
ON Semiconductor |
MOSFET 2N-CH 40V 6A 8-SOIC |
116,604 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 40V | 6A | 29mOhm @ 6A, 10V | 3V @ 250µA | 11nC @ 5V | 955pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
STMicroelectronics |
MOSFET 2N-CH 30V 3A 8SOIC |
41,340 |
|
STripFET™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3A | 110mOhm @ 1A, 10V | 2.5V @ 250µA | 4.5nC @ 10V | 121pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Rohm Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET |
48,156 |
|
- | 2 N-Channel (Dual) | - | 30V | 9A | 17mOhm @ 7A, 4.5V | 1.5V @ 1mA | 12nC @ 4.5V | 1400pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
|
|
Texas Instruments |
MOSFET 2N-CH 20V 5A 6WSON |
30,162 |
|
NexFET™ | 2 N-Channel (Dual) | Logic Level Gate, 5V Drive | 20V | 5A | 27mOhm @ 5A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 469pF @ 10V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) |
|
|
Alpha & Omega Semiconductor |
MOSFET 2N-CH 30V 19A/26A |
49,716 |
|
- | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 19A, 26A | 5.2mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | 820pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-DFN-EP (5x6) |
|
|
ON Semiconductor |
MOSFET N/P-CH 30V 3.9A/3.5A 8-SO |
19,758 |
|
- | N and P-Channel | Standard | 30V | 3.9A, 3.5A | 65mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | 235pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Texas Instruments |
MOSFET 2N-CH 20V 39A 8VSON |
2,238 |
|
NexFET™ | 2 N-Channel (Dual) Common Source | Logic Level Gate, 5V Drive | 20V | 39A | 12.4mOhm @ 10A, 8V | 1.4V @ 250µA | 15.2nC @ 4.5V | 2390pF @ 10V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) |
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 7.5A 8SOIC |
49,314 |
|
PowerTrench®, SyncFET™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A | 22mOhm @ 7.5A, 10V | 3V @ 1mA | 14nC @ 5V | 550pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Vishay Siliconix |
MOSFET 2N-CH 20V 2A 6-TSOP |
29,208 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2A | 125mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 4nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
|
|
Diodes Incorporated |
MOSFET N/P-CH 100V 2A 8-SOIC |
24,648 |
|
- | N and P-Channel | Logic Level Gate | 100V | 2A | 230mOhm @ 1A, 10V | 2.4V @ 250µA | 9.2nC @ 10V | 497pF @ 50V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Diodes Incorporated |
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN |
1,780 |
|
- | N and P-Channel | Logic Level Gate | 30V | 2.9A, 2.1A | 120mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x2) |
|
|
Texas Instruments |
MOSFET 2N-CH 30V 5A 6WSON |
144,294 |
|
NexFET™ | 2 N-Channel (Dual) | Logic Level Gate, 5V Drive | 30V | 5A | 32.4mOhm @ 4A, 10V | 2V @ 250µA | 6nC @ 10V | 353pF @ 15V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) |
|
|
Alpha & Omega Semiconductor |
MOSFET 2 N-CH 60V 9.5A 8SOIC |
27,966 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 60V | 9.5A (Ta) | 14.5mOhm @ 9.5A, 10V | 2.2V @ 250µA | 10nC @ 4.5V | 755pF @ 30V | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8SOIC |
20,040 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 9.4A | 14mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 23nC @ 4.5V | 1821pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Texas Instruments |
MOSFET 2N-CH 30V 27A 8VSON |
20,724 |
|
NexFET™ | 2 N-Channel (Dual) Common Source | Logic Level Gate | 30V | 27A | 33mOhm @ 7A , 8V | 1.3V @ 250µA | 8.2nC @ 4.5V | 1250pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON (3.3x3.3) |
|
|
Infineon Technologies |
MOSFET 2N-CH 80V 3.6A 8-SOIC |
34,398 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 80V | 3.6A | 73mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
ON Semiconductor |
MOSFET N/P-CH 30V 8SOIC |
24,282 |
|
- | N and P-Channel | Logic Level Gate | 30V | 3.7A, 2.9A | 80mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 320pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Vishay Siliconix |
MOSFET 2 N-CH 80V POWERPAK SO8 |
29,568 |
|
Automotive, AEC-Q101, TrenchFET® | 2 N-Channel (Dual) | Standard | 80V | 30A (Tc) | 19mOhm @ 8A, 10V | 2.5V @ 250µA | 32nC @ 10V | 1400pF @ 25V | 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 7.5A 8SOIC |
47,868 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A | 18mOhm @ 7.5A, 10V | 3V @ 250µA | 17nC @ 5V | 1235pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
120,084 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |