CSD85312Q3E
For Reference Only
| Part Number | CSD85312Q3E | ||||||||||||||||||
| PNEDA Part # | CSD85312Q3E | ||||||||||||||||||
| Description | MOSFET 2N-CH 20V 39A 8VSON | ||||||||||||||||||
| Manufacturer | Texas Instruments | ||||||||||||||||||
| Unit Price |
|
||||||||||||||||||
| In Stock | 2,238 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|||||||||||||||||||
|
|
|||||||||||||||||||
CSD85312Q3E Resources
| Brand | Texas Instruments |
| ECAD Module |
|
| Mfr. Part Number | CSD85312Q3E |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- CSD85312Q3E Datasheet
- where to find CSD85312Q3E
- Texas Instruments
- Texas Instruments CSD85312Q3E
- CSD85312Q3E PDF Datasheet
- CSD85312Q3E Stock
- CSD85312Q3E Pinout
- Datasheet CSD85312Q3E
- CSD85312Q3E Supplier
- Texas Instruments Distributor
- CSD85312Q3E Price
- CSD85312Q3E Distributor
CSD85312Q3E Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-VSON (3.3x3.3) |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.7A Rds On (Max) @ Id, Vgs 22mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V Power - Max 500mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-XFLGA Supplier Device Package 4-Chip LGA (1.59x1.59) |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.3A (Tc), 5.3A (Tc) Rds On (Max) @ Id, Vgs 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V, 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 535pF @ 15V, 528pF @ 15V Power - Max 3.3W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer STMicroelectronics Series STripFET™ II FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V Power - Max 1.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
