Transistors - FETs, MOSFETs - Arrays
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Arrays
Records 3,829
Page 16/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MOSFET 2N/2P-CH 60V SM8 |
42,420 |
|
- | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 60V | 1.6A, 1.3A | 300mOhm @ 1.8A, 10V | 3V @ 250µA | 3.2nC @ 10V | 166pF @ 40V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
|
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|
ON Semiconductor |
MOSFET 2N-CH 30V 35A |
24,390 |
|
PowerTrench® | 2 N-Channel (Dual) | Standard | 30V | 35A | 1.25mOhm @ 35A, 10V | 3V @ 250µA | 149nC @ 10V | 10395pF @ 15V | 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power56 |
|
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|
Vishay Siliconix |
MOSFET 2 N-CH 60V POWERPAK8X8 |
29,598 |
|
Automotive, AEC-Q101, TrenchFET® | 2 N-Channel (Dual) | Standard | 60V | 63A (Tc) | 9mOhm @ 10A, 10V | 2.5V @ 250µA | 24nC @ 10V | 1950pF @ 25V | 71W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 Dual | PowerPAK® 8 x 8 Dual |
|
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|
Texas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC |
31,752 |
|
NexFET™ | 2 N-Channel (Dual) | Standard | 60V | 15A | 15mOhm @ 8A, 10V | 3.6V @ 250µA | 18nC @ 10V | 1400pF @ 30V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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|
Vishay Siliconix |
MOSFET 2N-CH 60V 3.4A 1212-8 |
85,644 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 60V | 3.4A | 60mOhm @ 4.8A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
|
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Vishay Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC |
23,664 |
|
TrenchFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 6.3A | 19mOhm @ 8.4A, 10V | 3V @ 250µA | 25nC @ 5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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|
Infineon Technologies |
MOSFET 2N-CH 25V 64A/145A PQFN |
28,980 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 25V | 64A, 145A | 3.2mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | 31W, 50W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) |
|
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|
Texas Instruments |
MOSFET 2N-CH 30V 32A 8LSON |
23,694 |
|
NexFET™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 32A | 7.6mOhm @ 20A, 8V | 2.1V @ 250µA | 7.7nC @ 4.5V | 1255pF @ 15V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
|
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|
ON Semiconductor |
MOSFET 2N-CH 30V 13A/26A 3.3MM |
271 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 13A, 26A | 6.4mOhm @ 13A, 10V | 3V @ 250µA | 13nC @ 10V | 827pF @ 15V | 800mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Powerclip-33 |
|
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|
Texas Instruments |
MOSFET 2N-CH 30V 15A 8SON |
16,176 |
|
NexFET™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 5V Drive | 30V | 15A | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 4.6nC @ 4.5V | 662pF @ 15V | 6W | 125°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON (3.3x3.3) |
|
|
|
ON Semiconductor |
MOSFET 2N-CH 30V 12A/16A POWER56 |
27,954 |
|
PowerTrench® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 12A, 16A | 8.5mOhm @ 12A, 10V | 3V @ 250µA | 13nC @ 4.5V | 1705pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (5x6), Power56 |
|
|
|
Texas Instruments |
MOSFET 2N-CH 30V 25A |
14,808 |
|
NexFET™ | 2 N-Channel (Dual) | Standard | 30V | 25A | - | 1.9V @ 250µA | 7.4nC @ 4.5V | 1050pF @ 15V | 6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (3.3x3.3) |
|
|
|
ON Semiconductor |
MOSFET 2N/2P-CH 100V/80V 12-MLP |
26,676 |
|
GreenBridge™ PowerTrench® | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V, 80V | 3.4A, 2.6A | 110mOhm @ 3A, 10V | 4V @ 250µA | 5nC @ 10V | 210pF @ 50V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 12-WDFN Exposed Pad | 12-MLP (5x4.5) |
|
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|
Texas Instruments |
MOSFET 2 N-CHANNEL 30V 8WSON |
19,896 |
|
NexFET™ | 2 N-Channel (Dual) Common Drain | Standard | 30V | - | - | 1.2V @ 250µA | 28nC @ 4.5V | 4290pF @ 15V | 2.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WSON (3.3x3.3) |
|
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|
EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
3,137 |
|
- | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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|
Vishay Siliconix |
MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
101,004 |
|
TrenchFET® | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.6A | 105mOhm @ 4.1A, 10V | 4V @ 250µA | 26nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
|
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|
Infineon Technologies |
MOSFET 2N-CH 150V 8.7A TO-220FP |
20,976 |
|
- | 2 N-Channel (Dual) | Standard | 150V | 8.7A | 95mOhm @ 5.2A, 10V | 4.9V @ 50µA | 20nC @ 10V | 810pF @ 25V | 18W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack | TO-220-5 Full-Pak |
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Microchip Technology |
MOSFET 2N-CH 250V 1.1A 8VDFN |
6,300 |
|
- | 2 N-Channel (Dual) | Depletion Mode | 250V | 1.1A | 3.5Ohm @ 1A, 0V | - | 7.04nC @ 1.5V | 1000pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (5x5) |
|
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Advanced Linear Devices Inc. |
MOSFET N/P-CH 10.6V 8DIP |
6,792 |
|
- | N and P-Channel Complementary | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 14DIP |
12,912 |
|
- | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
|
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Advanced Linear Devices Inc. |
MOSFET 4P-CH 10.6V 14DIP |
17,244 |
|
- | 4 P-Channel, Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
|
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|
Advanced Linear Devices Inc. |
MOSFET 2N/2P-CH 10.6V 14DIP |
16,584 |
|
- | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
|
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|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
87,732 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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|
Sanken |
MOSFET 4N-CH 60V 5A 15-SIP |
15,228 |
|
- | 4 N-Channel (Half Bridge) | Logic Level Gate | 60V | 5A | 300mOhm @ 3A, 4V | 2V @ 250µA | - | 320pF @ 10V | 4.8W | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP |
|
|
|
EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
78,552 |
|
eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
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|
Sanken |
MOSFET 5N-CH 60V 10A 12-SIP |
17,952 |
|
- | 5 N-Channel, Common Source | Logic Level Gate | 60V | 10A | 220mOhm @ 3A, 4V | 2V @ 250µA | - | 320pF @ 10V | 5W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP w/fin |
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|
Sanken |
MOSFET 6N-CH 60V 5A 15-SIP |
8,148 |
|
- | 6 N-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 5A | 300mOhm @ 3A, 4V | 2V @ 250µA | - | 320pF @ 10V | 5W | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP |
|
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|
Advanced Linear Devices Inc. |
MOSFET 2N/2P-CH 10.6V 14DIP |
7,254 |
|
- | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
|
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|
Microchip Technology |
MOSFET 6N/6P-CH 200V 56VQFN |
27 |
|
- | 6 N and 6 P-Channel | Standard | 200V | - | 8Ohm @ 1A, 10V | 2.4V @ 1mA | - | 50pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 56-VFQFN Exposed Pad | 56-QFN (8x8) |
|
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|
Cree/Wolfspeed |
MOSFET 6N-CH 1200V 29.5A MODULE |
4,698 |
|
Z-Rec® | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 29.5A (Tc) | 98mOhm @ 20A, 20V | 2.2V @ 1mA (Typ) | 61.5nC @ 20V | 900pF @ 800V | 167W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |