Transistors - Bipolar (BJT) - Single
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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - Single
Records 13,715
Page 425/458
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3 |
8,514 |
|
- | PNP | 5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3 |
4,284 |
|
- | PNP | 5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3 |
4,086 |
|
- | PNP | 5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 500MA 400V TO226-3 |
6,192 |
|
- | PNP | 500mA | 400V | 1V @ 10mA, 100mA | 10µA (ICBO) | 140 @ 20mA, 5V | 900mW | 35MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 500MA 400V TO226-3 |
2,268 |
|
- | PNP | 500mA | 400V | 1V @ 10mA, 100mA | 10µA (ICBO) | 140 @ 20mA, 5V | 900mW | 35MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
5,886 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
5,940 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
5,094 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
4,608 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
4,842 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
4,626 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
3,240 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
2,268 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50MA 150V TO226-3 |
3,078 |
|
- | PNP | 50mA | 150V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
8,640 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
7,236 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
2,916 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
5,832 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
2,592 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
4,698 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
7,128 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3 |
2,502 |
|
- | PNP | 800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | LSTM |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 60V TO220-3 |
3,510 |
|
- | PNP | 3A | 60V | 1.5V @ 200mA, 2A | 10µA (ICBO) | 100 @ 500mA, 5V | 2W | 9MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 100V TO226-3 |
5,292 |
|
- | PNP | 2A | 100V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 100V TO226-3 |
5,904 |
|
- | PNP | 2A | 100V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 100V TO226-3 |
8,010 |
|
- | PNP | 2A | 100V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 100V TO226-3 |
6,786 |
|
- | PNP | 2A | 100V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 100V TO226-3 |
3,726 |
|
- | PNP | 2A | 100V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 2A 100V TO226-3 |
7,560 |
|
- | PNP | 2A | 100V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 4A 100V TO220-3 |
6,642 |
|
- | PNP | 4A | 100V | 1.5V @ 6mA, 3A | 2µA (ICBO) | 2000 @ 3A, 2V | 2W | - | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |