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2SA949-Y(TE6,F,M)

2SA949-Y(TE6,F,M)

For Reference Only

Part Number 2SA949-Y(TE6,F,M)
PNEDA Part # 2SA949-Y-TE6-F-M
Description TRANS PNP 50MA 150V TO226-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,626
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SA949-Y(TE6 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SA949-Y(TE6,F,M)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SA949-Y(TE6, 2SA949-Y(TE6 Datasheet (Total Pages: 4, Size: 130.14 KB)
PDF2SA949-Y Datasheet Cover
2SA949-Y Datasheet Page 2 2SA949-Y Datasheet Page 3 2SA949-Y Datasheet Page 4

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2SA949-Y(TE6 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)150V
Vce Saturation (Max) @ Ib, Ic800mV @ 1mA, 10A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Power - Max800mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD

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