2SA965-Y(F,M)
For Reference Only
| Part Number | 2SA965-Y(F,M) |
| PNEDA Part # | 2SA965-Y-F-M |
| Description | TRANS PNP 800MA 120V TO226-3 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 2,916 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2SA965-Y(F Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | 2SA965-Y(F,M) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes
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2SA965-Y(F Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Power - Max | 900mW |
| Frequency - Transition | 120MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | LSTM |
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