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2SA965-Y(F,M)

2SA965-Y(F,M)

For Reference Only

Part Number 2SA965-Y(F,M)
PNEDA Part # 2SA965-Y-F-M
Description TRANS PNP 800MA 120V TO226-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,916
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SA965-Y(F Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part Number2SA965-Y(F,M)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
2SA965-Y(F, 2SA965-Y(F Datasheet (Total Pages: 4, Size: 144.58 KB)
PDF2SA965-Y Datasheet Cover
2SA965-Y Datasheet Page 2 2SA965-Y Datasheet Page 3 2SA965-Y Datasheet Page 4

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2SA965-Y(F Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 5V
Power - Max900mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageLSTM

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