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VWM200-01P

VWM200-01P

For Reference Only

Part Number VWM200-01P
PNEDA Part # VWM200-01P
Description MOSFET 6N-CH 100V 210A V2
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,664
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VWM200-01P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberVWM200-01P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
VWM200-01P, VWM200-01P Datasheet (Total Pages: 2, Size: 201.56 KB)
PDFVWM200-01P Datasheet Cover
VWM200-01P Datasheet Page 2

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VWM200-01P Specifications

ManufacturerIXYS
Series-
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C210A
Rds On (Max) @ Id, Vgs5.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseV2-PAK
Supplier Device PackageV2-PAK

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