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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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SI5511DC-T1-E3
SI5511DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
  • Power - Max: 3.1W, 2.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock4,392
SI5511DC-T1-GE3
SI5511DC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
  • Power - Max: 3.1W, 2.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock7,110
SI5513CDC-T1-E3
SI5513CDC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock58,914
SI5513CDC-T1-GE3
SI5513CDC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock78,486
SI5513DC-T1-E3
SI5513DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 3.1A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock4,266
SI5513DC-T1-GE3
SI5513DC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 3.1A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock3,906
SI5515CDC-T1-E3
SI5515CDC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock28,212
SI5515CDC-T1-GE3
SI5515CDC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock3,294
SI5515DC-T1-E3
SI5515DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 4.4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock2,484
SI5515DC-T1-GE3
SI5515DC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 4.4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock8,190
SI5517DU-T1-E3
SI5517DU-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6A CHIPFET

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 8.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® ChipFET™ Dual
  • Supplier Device Package: PowerPAK® ChipFet Dual
In Stock4,104
SI5517DU-T1-GE3
SI5517DU-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6A CHIPFET

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 8.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® ChipFET™ Dual
  • Supplier Device Package: PowerPAK® ChipFet Dual
In Stock5,058
SI5519DU-T1-GE3
SI5519DU-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6A CHIPFETs

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 6.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® ChipFET™ Dual
  • Supplier Device Package: PowerPAK® ChipFet Dual
In Stock7,254
SI5902BDC-T1-E3
SI5902BDC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 3.12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock4,824
SI5902BDC-T1-GE3
SI5902BDC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 3.12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock73,842
SI5902DC-T1-E3
SI5902DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 2.9A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock8,694
SI5903DC-T1-E3
SI5903DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.1A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock2,790
SI5903DC-T1-GE3
SI5903DC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.1A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock2,340
SI5904DC-T1-E3
SI5904DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 3.1A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock6,984
SI5904DC-T1-GE3
SI5904DC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 3.1A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock5,274
SI5905BDC-T1-E3
SI5905BDC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock3,960
SI5905BDC-T1-GE3
SI5905BDC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock2,376
SI5905DC-T1-E3
SI5905DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 3A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock3,258
SI5905DC-T1-GE3
SI5905DC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 3A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock8,784
SI5906DU-T1-GE3
SI5906DU-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6A PPAK FET

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® ChipFET™ Dual
  • Supplier Device Package: PowerPAK® ChipFet Dual
In Stock4,464
SI5908DC-T1-E3
SI5908DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4.4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock143,424
SI5908DC-T1-GE3
SI5908DC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4.4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock3,294
SI5915BDC-T1-E3
SI5915BDC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock4,068
SI5915BDC-T1-GE3
SI5915BDC-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock8,640
SI5915DC-T1-E3
SI5915DC-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 3.4A 1206-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET™
In Stock5,112