SI5513DC-T1-GE3

For Reference Only
Part Number | SI5513DC-T1-GE3 |
PNEDA Part # | SI5513DC-T1-GE3 |
Description | MOSFET N/P-CH 20V 3.1A 1206-8 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 3,906 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Apr 1 - Apr 6 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI5513DC-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SI5513DC-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
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SI5513DC-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.1A |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET™ |
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