SI5513CDC-T1-E3
For Reference Only
| Part Number | SI5513CDC-T1-E3 |
| PNEDA Part # | SI5513CDC-T1-E3 |
| Description | MOSFET N/P-CH 20V 4A 1206-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 58,914 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 19 - Apr 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI5513CDC-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI5513CDC-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI5513CDC-T1-E3 Datasheet
- where to find SI5513CDC-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI5513CDC-T1-E3
- SI5513CDC-T1-E3 PDF Datasheet
- SI5513CDC-T1-E3 Stock
- SI5513CDC-T1-E3 Pinout
- Datasheet SI5513CDC-T1-E3
- SI5513CDC-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI5513CDC-T1-E3 Price
- SI5513CDC-T1-E3 Distributor
SI5513CDC-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3.7A |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 285pF @ 10V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 N-Channel, Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.6A, 5.3A Rds On (Max) @ Id, Vgs 29mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 900pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V, 4320pF @ 15V Power - Max 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (6x5) |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.2A Rds On (Max) @ Id, Vgs 21mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 72.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1761pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package P-DSO-8 |
