Transistors

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Records 64,903

Page 1881/2164

Part Number	Description	In Stock
STV240N75F3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 240A POWERSO-10 Manufacturer: STMicroelectronics Series: STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	In Stock513
STV250N55F3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 250A POWERSO-10 Manufacturer: STMicroelectronics Series: STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	In Stock4,266
STV270N4F3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 270A POWERSO-10 Manufacturer: STMicroelectronics Series: STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	In Stock5,310
STV300NH02L STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 280A POWERSO-10 Manufacturer: STMicroelectronics Series: STripFET™ III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	In Stock6,372
STW10N105K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1050V 6A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock16,320
STW10N95K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 8A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock15,936
STW10NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock16,620
STW10NK80Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 9A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V FET Feature: - Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock23,016
STW11NB80 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A TO-247 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,544
STW11NK100Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 8.3A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock55,506
STW11NK90Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 9.2A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 980mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,856
STW11NM80 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 11A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,244
STW120NF10 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 110A TO-247 Manufacturer: STMicroelectronics Series: STripFET™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V FET Feature: - Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock19,938
STW12N120K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 12A TO247 Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock17,268
STW12N150K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 7A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock17,184
STW12N170K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 1700 V, 2.3 OHM TYP., Manufacturer: STMicroelectronics Series: MDmesh™ K5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 100V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock2,754
STW12NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 640mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,914
STW12NK80Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 10.5A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock15,780
STW12NK90Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 880mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock14,058
STW12NK95Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 10A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock9,408
STW12NM60N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,236
STW13N60M2 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II Plus FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock8,640
STW13N80K5 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH5™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock13,008
STW13N95K3 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 10A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,508
STW13NB60 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO-247 Manufacturer: STMicroelectronics Series: PowerMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 540mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock2,250
STW13NK100Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 13A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock17,208
STW13NK50Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 11A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,996
STW13NK60Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,440
STW13NK80Z STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A TO-247 Manufacturer: STMicroelectronics Series: SuperMESH™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,982
STW13NM50N STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO-247 Manufacturer: STMicroelectronics Series: MDmesh™ II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,582

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