Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP20NM65N

STP20NM65N

For Reference Only

Part Number STP20NM65N
PNEDA Part # STP20NM65N
Description MOSFET N-CH 650V 15A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,678
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP20NM65N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP20NM65N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP20NM65N, STP20NM65N Datasheet (Total Pages: 16, Size: 174.51 KB)
PDFSTP20NM65N Datasheet Cover
STP20NM65N Datasheet Page 2 STP20NM65N Datasheet Page 3 STP20NM65N Datasheet Page 4 STP20NM65N Datasheet Page 5 STP20NM65N Datasheet Page 6 STP20NM65N Datasheet Page 7 STP20NM65N Datasheet Page 8 STP20NM65N Datasheet Page 9 STP20NM65N Datasheet Page 10 STP20NM65N Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP20NM65N Datasheet
  • where to find STP20NM65N
  • STMicroelectronics

  • STMicroelectronics STP20NM65N
  • STP20NM65N PDF Datasheet
  • STP20NM65N Stock

  • STP20NM65N Pinout
  • Datasheet STP20NM65N
  • STP20NM65N Supplier

  • STMicroelectronics Distributor
  • STP20NM65N Price
  • STP20NM65N Distributor

STP20NM65N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1280pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

The Products You May Be Interested In

DMN10H100SK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

80mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1172pF @ 50V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMP2123LQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

72mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.3nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

443pF @ 16V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFSL7534PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

279nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10034pF @ 25V

FET Feature

-

Power Dissipation (Max)

294W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

JANTX2N7227U

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/592

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

415mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-267AB

Package / Case

TO-267AB

IXFX48N60P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8860pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Recently Sold

DS1670E

DS1670E

Maxim Integrated

IC RTC SYSTEM CTRLR SER 20-TSSOP

ULN2003ADR2G

ULN2003ADR2G

ON Semiconductor

IC PWR RELAY 7NPN 1:1 16SO

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

PA95

PA95

Apex Microtechnology

IC OPAMP POWER 1 CIRCUIT 8SIP

74HC132D,653

74HC132D,653

Nexperia

IC GATE NAND SCHMITT 4CH 14SO

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

WSL25122L000FEA

WSL25122L000FEA

Vishay Dale

RES 0.002 OHM 1% 1W 2512

MUR1100ERLG

MUR1100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 1A AXIAL

ST62T65CM6

ST62T65CM6

STMicroelectronics

IC MCU 8BIT 3.8KB OTP 28SOIC

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

XC6VSX475T-1FF1759I

XC6VSX475T-1FF1759I

Xilinx

IC FPGA 840 I/O 1759FCBGA