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STFW38N65M5

STFW38N65M5

For Reference Only

Part Number STFW38N65M5
PNEDA Part # STFW38N65M5
Description MOSFET N-CH 650V 30A TO-3PF
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,664
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STFW38N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTFW38N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STFW38N65M5, STFW38N65M5 Datasheet (Total Pages: 16, Size: 1,256.65 KB)
PDFSTF38N65M5 Datasheet Cover
STF38N65M5 Datasheet Page 2 STF38N65M5 Datasheet Page 3 STF38N65M5 Datasheet Page 4 STF38N65M5 Datasheet Page 5 STF38N65M5 Datasheet Page 6 STF38N65M5 Datasheet Page 7 STF38N65M5 Datasheet Page 8 STF38N65M5 Datasheet Page 9 STF38N65M5 Datasheet Page 10 STF38N65M5 Datasheet Page 11

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STFW38N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 100V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOWATT-218FX
Package / CaseISOWATT218FX

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