Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Records 64,903

Page 1813/2164

Part Number	Description	In Stock
SSM3K361TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3.5A UFM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock29,460
SSM3K36FS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 500MA SSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock29,352
SSM3K36MFV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 500MA VESM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	In Stock674,142
SSM3K36TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS=20 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock46,494
SSM3K376R,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL LOW RON NCH MOSFETS ID: 4A Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs (Max): +12V, -8V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	In Stock24,666
SSM3K37CT,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.2A CST3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	In Stock5,364
SSM3K37FS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET NCH 20V 200MA SSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock6,750
SSM3K37MFV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.25A VESM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	In Stock73,968
SSM3K44FS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 PB-F SMALL LOW ON RESISTANCE Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock48,666
SSM3K44MFV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS=30 Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock65,454
SSM3K48FU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH VDSS30V Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,334
SSM3K56ACT,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.4A CST3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	In Stock214,116
SSM3K56CT,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET NCH 20V 800MA CST3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: 3-XFDFN	In Stock320,646
SSM3K56FS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.8A SSM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock2,322
SSM3K56MFV,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.8A VESM Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	In Stock72,282
SSM3K59CTB,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 2A CST3B Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3B Package / Case: 3-SMD, No Lead	In Stock93,162
SSM3K62TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE NCH Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	In Stock25,878
SSM3K7002BF,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.2A S-MINI Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,444
SSM3K7002BS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SMD Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,940
SSM3K7002BSU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V .2A USM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	In Stock3,186
SSM3K7002CFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.17A SMD Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	In Stock5,184
SSM3K7002KF,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.4A Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 270mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock22,650
SSM3K7002KFU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single LOAD SWITCH CURRENT REDUCTION Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	In Stock21,858
SSM3K72CFS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.17A Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock4,500
SSM3K72CTC,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.15A CST3C Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SOT-1123	In Stock73,422
SSM3K72KCT,L3F Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.4A Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	In Stock253,044
SSM3K72KFS,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X34 SMALL LOW ON RESISTANCE NCH Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	In Stock141,504
SSM4K27CTTPL3 Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V .5A CST4 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 205mOhm @ 250mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 10V FET Feature: - Power Dissipation (Max): 400mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST4 (1.2x0.8) Package / Case: 4-SMD, No Lead	In Stock5,652
SSM5G10TU(TE85L,F) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A UFV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIII FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFV Package / Case: 6-SMD (5 Leads), Flat Lead	In Stock7,038
SSM5H08TU,LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET N-CH+SBD VDS Manufacturer: Toshiba Semiconductor and Storage Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,652

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