Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSM3K376R,LF

SSM3K376R,LF

For Reference Only

Part Number SSM3K376R,LF
PNEDA Part # SSM3K376R-LF
Description SMALL LOW RON NCH MOSFETS ID: 4A
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 24,666
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM3K376R Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM3K376R,LF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSM3K376R,LF Datasheet
  • where to find SSM3K376R,LF
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage SSM3K376R,LF
  • SSM3K376R,LF PDF Datasheet
  • SSM3K376R,LF Stock

  • SSM3K376R,LF Pinout
  • Datasheet SSM3K376R,LF
  • SSM3K376R,LF Supplier

  • Toshiba Semiconductor and Storage Distributor
  • SSM3K376R,LF Price
  • SSM3K376R,LF Distributor

SSM3K376R Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.5V
Vgs (Max)+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageSOT-23F
Package / CaseSOT-23-3 Flat Leads

The Products You May Be Interested In

DMN63D1LT-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

320mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

392nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 25V

FET Feature

-

Power Dissipation (Max)

330mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

R6047KNZ4C13

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

72mOhm @ 25.8A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 25V

FET Feature

-

Power Dissipation (Max)

481W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

R6018JNJGTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

286mOhm @ 9A, 15V

Vgs(th) (Max) @ Id

7V @ 4.2mA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 15V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 100V

FET Feature

-

Power Dissipation (Max)

220W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS (D2PAK)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI1499DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

78mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 4V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 2.78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

IS25CQ032-JBLE

IS25CQ032-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 8SOIC

AD7817BRUZ

AD7817BRUZ

Analog Devices

SENSOR DIGITAL -40C-85C 16TSSOP

SE5534AN

SE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

1SS355VMTE-17

1SS355VMTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

0217.500MXP

0217.500MXP

Littelfuse

FUSE GLASS 500MA 250VAC 5X20MM

ATTINY816-MN

ATTINY816-MN

Microchip Technology

IC MCU 8BIT 8KB FLASH 20QFN

74477810

74477810

Wurth Electronics

SMT SHIELDED POWER INDUCTOR SIZE

2N3771

2N3771

STMicroelectronics

TRANS NPN 40V 30A TO-3

AS5163-HTSM

AS5163-HTSM

ams

SENSOR ANGLE 360DEG SMD

IP4220CZ6,125

IP4220CZ6,125

Nexperia

TVS DIODE 5.5V 6TSOP

IHLP2525CZERR10M01

IHLP2525CZERR10M01

Vishay Dale

FIXED IND 100NH 32.5A 1.7 MOHM