Transistors

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Records 64,903

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Part Number	Description	In Stock
SI8465DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	In Stock8,406
SI8466EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8V 3.6A MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA, WLCSP	In Stock152,556
SI8467DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 73mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	In Stock3,580
SI8469DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 3.6A MICRO Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 4V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	In Stock4,266
SI8472DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.3A MICRO Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V FET Feature: - Power Dissipation (Max): 780mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Micro Foot (1x1) Package / Case: 4-UFBGA	In Stock7,884
SI8473EDB-T1-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 41mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	In Stock4,140
SI8475EDB-T1-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	In Stock3,366
SI8481DB-T1-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9.7A 4-MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® Gen III FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V FET Feature: - Power Dissipation (Max): 2.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-MICRO FOOT® (1.6x1.6) Package / Case: 4-UFBGA	In Stock2,100
SI8483DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 16A MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 6V FET Feature: - Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot™ (1.5x1) Package / Case: 6-UFBGA	In Stock2,034
SI8487DB-T1-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 31mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	In Stock8,244
SI8489EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 10V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	In Stock4,716
SI8497DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 13A MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Rds On (Max) @ Id, Vgs: 53mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V FET Feature: - Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-microfoot Package / Case: 6-UFBGA	In Stock25,470
SI8499DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 16A MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V FET Feature: - Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot™ (1.5x1) Package / Case: 6-UFBGA	In Stock154,878
SI8800EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	In Stock5,670
SI8802DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock107,040
SI8805EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 68mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock4,086
SI8806DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock8,568
SI8808DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	In Stock376,464
SI8809EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.9A MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock4,608
SI8810EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.1A MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 72mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock7,866
SI8812DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	In Stock4,284
SI8816EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V MICRO FOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock686,598
SI8817DB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock25,386
SI8819EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2.9A 4-MICROFOOT Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 6V FET Feature: - Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Package / Case: 4-XFBGA	In Stock7,038
SI8821EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V MICRO FOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	In Stock111,234
SI8823EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.7A 4-MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® Gen III FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V FET Feature: - Power Dissipation (Max): 900mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-MICRO FOOT® (0.8x0.8) Package / Case: 4-XFBGA	In Stock5,130
SI8824EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.1A MICROFOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	In Stock215,514
SI8851EDB-T2-E1 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 7.7A MICRO FOOT Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V FET Feature: - Power Dissipation (Max): 660mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power Micro Foot® (2.4x2) Package / Case: 30-XFBGA	In Stock2,196
SI9407BDY-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 4.7A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V FET Feature: - Power Dissipation (Max): 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock19,416
SI9407BDY-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 4.7A 8-SOIC Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock20,982

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