SI8487DB-T1-E1
For Reference Only
| Part Number | SI8487DB-T1-E1 |
| PNEDA Part # | SI8487DB-T1-E1 |
| Description | MOSFET P-CH 30V MICROFOOT |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 8,244 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI8487DB-T1-E1 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SI8487DB-T1-E1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SI8487DB-T1-E1 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-UFBGA |
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 3.8Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V FET Feature - Power Dissipation (Max) 100mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VML0806 Package / Case 3-SMD, No Lead |
