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SI8473EDB-T1-E1

SI8473EDB-T1-E1

For Reference Only

Part Number SI8473EDB-T1-E1
PNEDA Part # SI8473EDB-T1-E1
Description MOSFET P-CH 20V MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8473EDB-T1-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8473EDB-T1-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8473EDB-T1-E1, SI8473EDB-T1-E1 Datasheet (Total Pages: 12, Size: 249.33 KB)
PDFSI8473EDB-T1-E1 Datasheet Cover
SI8473EDB-T1-E1 Datasheet Page 2 SI8473EDB-T1-E1 Datasheet Page 3 SI8473EDB-T1-E1 Datasheet Page 4 SI8473EDB-T1-E1 Datasheet Page 5 SI8473EDB-T1-E1 Datasheet Page 6 SI8473EDB-T1-E1 Datasheet Page 7 SI8473EDB-T1-E1 Datasheet Page 8 SI8473EDB-T1-E1 Datasheet Page 9 SI8473EDB-T1-E1 Datasheet Page 10 SI8473EDB-T1-E1 Datasheet Page 11

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SI8473EDB-T1-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs41mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.1W (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-XFBGA, CSPBGA

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