Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Records 64,903

Page 1708/2164

Part Number	Description	In Stock
SCT3080ALHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V FET Feature: - Power Dissipation (Max): 134W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock9,804
SCT3080KLGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 1.2KV 31A TO247N Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 800V FET Feature: - Power Dissipation (Max): 165W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock21,300
SCT3080KLHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 800V FET Feature: - Power Dissipation (Max): 165W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock11,124
SCT30N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 45A HIP247 Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 105nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 400V FET Feature: - Power Dissipation (Max): 270W (Tc) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	In Stock7,434
SCT3105KLGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single SCT3105KL IS AN SIC (SILICON CAR Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 800V FET Feature: - Power Dissipation (Max): 134W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock6,948
SCT3105KLHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 800V FET Feature: - Power Dissipation (Max): 134W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock10,908
SCT3120ALGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 650V 21A TO247N Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V FET Feature: - Power Dissipation (Max): 103W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock45,870
SCT3120ALHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V FET Feature: - Power Dissipation (Max): 103W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock7,512
SCT3160KLGC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 1.2KV 17A TO247N Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 800V FET Feature: - Power Dissipation (Max): 103W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock20,436
SCT3160KLHRC11 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Vgs(th) (Max) @ Id: 5.6V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 18V Vgs (Max): +22V, -4V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 800V FET Feature: - Power Dissipation (Max): 103W Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	In Stock12,780
SCT50N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1.2KV TO247-3 Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V FET Feature: - Power Dissipation (Max): 318W (Tc) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	In Stock13,392
SCTH90N65G2V-7 STMicroelectronics	Transistors - FETs, MOSFETs - Single SILICON CARBIDE POWER MOSFET 650 Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 157nC @ 18V Vgs (Max): +22V, -10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 400V FET Feature: - Power Dissipation (Max): 330W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock5,022
SCTW90N65G2V STMicroelectronics	Transistors - FETs, MOSFETs - Single SILICON CARBIDE POWER MOSFET 650 Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 157nC @ 18V Vgs (Max): +22V, -10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 400V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	In Stock6,498
SCTWA10N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single IC POWER MOSFET 1200V HIP247 Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,552
SCTWA20N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single IC POWER MOSFET 1200V HIP247 Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,482
SCTWA30N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single IC POWER MOSFET 1200V HIP247 Manufacturer: STMicroelectronics Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,400
SCTWA50N120 STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 65A HIP247 Manufacturer: STMicroelectronics Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V FET Feature: - Power Dissipation (Max): 318W (Tc) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	In Stock8,640
SFF9250L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 12.6A TO-3PF Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 230mOhm @ 6.3A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock5,274
SFH154 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 34A TO-3P Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 25V FET Feature: - Power Dissipation (Max): 204W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock4,536
SFH9154 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 18A TO-3P Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V FET Feature: - Power Dissipation (Max): 204W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock5,868
SFH9240 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 11A TO-3P Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V FET Feature: - Power Dissipation (Max): 126W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock4,464
SFH9250L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 19.5A TO-3P Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 230mOhm @ 9.8A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V FET Feature: - Power Dissipation (Max): 204W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock4,446
SFM9014TF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.8A SOT-223 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	In Stock6,084
SFM9110TF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A SOT-223 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 25V FET Feature: - Power Dissipation (Max): 2.52W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	In Stock7,236
SFP9530 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 10.5A TO-220 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 25V FET Feature: - Power Dissipation (Max): 66W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock7,272
SFP9540 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 17A TO-220 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 25V FET Feature: - Power Dissipation (Max): 132W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock5,904
SFP9630 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 6.5A TO-220 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 25V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock5,850
SFP9634 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 5A TO-220 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 25V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock2,826
SFP9640 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 11A TO-220 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V FET Feature: - Power Dissipation (Max): 123W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock2,322
SFP9640L ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 11A TO-220 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V FET Feature: - Power Dissipation (Max): 98W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock2,286

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