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SCTW90N65G2V

SCTW90N65G2V

For Reference Only

Part Number SCTW90N65G2V
PNEDA Part # SCTW90N65G2V
Description SILICON CARBIDE POWER MOSFET 650
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,498
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SCTW90N65G2V Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSCTW90N65G2V
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SCTW90N65G2V, SCTW90N65G2V Datasheet (Total Pages: 12, Size: 397.46 KB)
PDFSCTW90N65G2V Datasheet Cover
SCTW90N65G2V Datasheet Page 2 SCTW90N65G2V Datasheet Page 3 SCTW90N65G2V Datasheet Page 4 SCTW90N65G2V Datasheet Page 5 SCTW90N65G2V Datasheet Page 6 SCTW90N65G2V Datasheet Page 7 SCTW90N65G2V Datasheet Page 8 SCTW90N65G2V Datasheet Page 9 SCTW90N65G2V Datasheet Page 10 SCTW90N65G2V Datasheet Page 11

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SCTW90N65G2V Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs157nC @ 18V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 400V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

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