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SCTWA50N120

SCTWA50N120

For Reference Only

Part Number SCTWA50N120
PNEDA Part # SCTWA50N120
Description MOSFET N-CH 1200V 65A HIP247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SCTWA50N120 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSCTWA50N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SCTWA50N120, SCTWA50N120 Datasheet (Total Pages: 11, Size: 709.9 KB)
PDFSCTWA50N120 Datasheet Cover
SCTWA50N120 Datasheet Page 2 SCTWA50N120 Datasheet Page 3 SCTWA50N120 Datasheet Page 4 SCTWA50N120 Datasheet Page 5 SCTWA50N120 Datasheet Page 6 SCTWA50N120 Datasheet Page 7 SCTWA50N120 Datasheet Page 8 SCTWA50N120 Datasheet Page 9 SCTWA50N120 Datasheet Page 10 SCTWA50N120 Datasheet Page 11

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SCTWA50N120 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs122nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 400V
FET Feature-
Power Dissipation (Max)318W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

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