Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1704/2164

Part Number	Description	In Stock
RU1E002SPTCL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.25A UMT3F Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	In Stock22,962
RU1J002YNTCL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.2A UMT3F Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	In Stock349,686
RU1L002SNTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single N-CHANNEL MOSFET, 2.5V. MOSFETS Manufacturer: Rohm Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,222
RUC002N05HZGT116 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single 1.2V DRIVE NCH MOSFET Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock29,466
RUC002N05T116 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.2A SST3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock22,878
RUE002N02TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V .2A EMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	In Stock143,856
RUE002N05TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.2A EMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	In Stock8,712
RUE003N02TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 300MA EMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	In Stock76,560
RUF015N02TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.5A TUMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	In Stock151,056
RUF020N02TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2A TUMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	In Stock95,508
RUF025N02FRATL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 20V 2.5A MIDDLE POWER MOSFET Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	In Stock24,258
RUF025N02TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.5A TUMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	In Stock4,644
RUL035N02FRATR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 20V 3.5A POWER MOSFET Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	In Stock8,820
RUL035N02TR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.5A TUMT6 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V FET Feature: - Power Dissipation (Max): 320mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	In Stock3,636
RUM001L02T2CL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.1A VMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	In Stock1,557,306
RUM002N02T2L Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.2A VMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	In Stock4,644
RUM002N05T2L Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.2A 3VMT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	In Stock204,588
RUM003N02T2L Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 300MA VMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	In Stock303,792
RUQ050N02TR Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5A TSMT6 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock6,480
RUR020N02TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2A TSMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V FET Feature: - Power Dissipation (Max): 540mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	In Stock26,076
RUR040N02TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4A TSMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	In Stock3,060
RUS100N02TB Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 10A 8SOP Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,736
RUU002N05T106 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.2A UMT3 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	In Stock6,318
RV1C001ZPT2L Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A VML0806 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML0806 Package / Case: 3-SMD, No Lead	In Stock5,580
RV1C002UNT2CL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.15A VML0806 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML0806 Package / Case: 3-SMD, No Lead	In Stock1,530,240
RV2C001ZPT2L Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A VML1006 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 (VML1006) Package / Case: SC-101, SOT-883	In Stock8,784
RV2C002UNT2L Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.18A VML1006 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 (VML1006) Package / Case: SC-101, SOT-883	In Stock76,134
RV2C010UNT2L Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1A VML1006 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V FET Feature: - Power Dissipation (Max): 400mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 (VML1006) Package / Case: SC-101, SOT-883	In Stock6,282
RV2C014BCT2CL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 700MA DFN1006 Manufacturer: Rohm Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V FET Feature: - Power Dissipation (Max): 400mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: 3-XFDFN	In Stock2,088
RV3C002UNT2CL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 20V 150MA SM SIG MOSFET, VML Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VML0604 Package / Case: 3-XFDFN	In Stock6,894

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