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RV2C014BCT2CL

RV2C014BCT2CL

For Reference Only

Part Number RV2C014BCT2CL
PNEDA Part # RV2C014BCT2CL
Description MOSFET P-CH 20V 700MA DFN1006
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RV2C014BCT2CL Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRV2C014BCT2CL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RV2C014BCT2CL, RV2C014BCT2CL Datasheet (Total Pages: 14, Size: 2,401.34 KB)
PDFRV2C014BCT2CL Datasheet Cover
RV2C014BCT2CL Datasheet Page 2 RV2C014BCT2CL Datasheet Page 3 RV2C014BCT2CL Datasheet Page 4 RV2C014BCT2CL Datasheet Page 5 RV2C014BCT2CL Datasheet Page 6 RV2C014BCT2CL Datasheet Page 7 RV2C014BCT2CL Datasheet Page 8 RV2C014BCT2CL Datasheet Page 9 RV2C014BCT2CL Datasheet Page 10 RV2C014BCT2CL Datasheet Page 11

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RV2C014BCT2CL Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs300mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds100pF @ 10V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1006-3
Package / Case3-XFDFN

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