Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RUM002N02T2L

RUM002N02T2L

For Reference Only

Part Number RUM002N02T2L
PNEDA Part # RUM002N02T2L
Description MOSFET N-CH 20V 0.2A VMT3
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RUM002N02T2L Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRUM002N02T2L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RUM002N02T2L Datasheet
  • where to find RUM002N02T2L
  • Rohm Semiconductor

  • Rohm Semiconductor RUM002N02T2L
  • RUM002N02T2L PDF Datasheet
  • RUM002N02T2L Stock

  • RUM002N02T2L Pinout
  • Datasheet RUM002N02T2L
  • RUM002N02T2L Supplier

  • Rohm Semiconductor Distributor
  • RUM002N02T2L Price
  • RUM002N02T2L Distributor

RUM002N02T2L Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 2.5V
Rds On (Max) @ Id, Vgs1.2Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds25pF @ 10V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVMT3
Package / CaseSOT-723

The Products You May Be Interested In

AOI1N60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9Ohm @ 650mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

160pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251A

Package / Case

TO-251-3 Stub Leads, IPak

SI4386DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.47W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IXFN56N90P

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

6.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

375nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

23000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

IRFB3507

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

97A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3540pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3060pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

1SMB5925BT3G

1SMB5925BT3G

ON Semiconductor

DIODE ZENER 10V 3W SMB

BH1726NUC-E2

BH1726NUC-E2

Rohm Semiconductor

SENSOR OPT AMBIENT WSON008X2120

SMBJ12CA-TR

SMBJ12CA-TR

STMicroelectronics

TVS DIODE 12V 25.3V SMB

L7815CV-DG

L7815CV-DG

STMicroelectronics

IC REG LINEAR 15V 1.5A TO220

IHLP5050FDER3R3M01

IHLP5050FDER3R3M01

Vishay Dale

FIXED IND 3.3UH 18A 6.8 MOHM SMD

USB3320C-EZK-TR

USB3320C-EZK-TR

Microchip Technology

IC TRANSCEIVER HALF 1/1 32QFN

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP

WM8962ECSN/R

WM8962ECSN/R

Cirrus Logic Inc.

IC CODEC STER 49WCSP

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23

MAX14780EESA+T

MAX14780EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

1N5614

1N5614

Semtech

DIODE GEN PURP 200V 2A AXIAL

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6