Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RUM002N02T2L

RUM002N02T2L

For Reference Only

Part Number RUM002N02T2L
PNEDA Part # RUM002N02T2L
Description MOSFET N-CH 20V 0.2A VMT3
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RUM002N02T2L Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRUM002N02T2L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RUM002N02T2L Datasheet
  • where to find RUM002N02T2L
  • Rohm Semiconductor

  • Rohm Semiconductor RUM002N02T2L
  • RUM002N02T2L PDF Datasheet
  • RUM002N02T2L Stock

  • RUM002N02T2L Pinout
  • Datasheet RUM002N02T2L
  • RUM002N02T2L Supplier

  • Rohm Semiconductor Distributor
  • RUM002N02T2L Price
  • RUM002N02T2L Distributor

RUM002N02T2L Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 2.5V
Rds On (Max) @ Id, Vgs1.2Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds25pF @ 10V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVMT3
Package / CaseSOT-723

The Products You May Be Interested In

IXFN56N90P

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

6.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

375nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

23000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

PSMN2R1-60CSJ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

2N6661JTXL02

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

725mW (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AD, TO-39-3 Metal Can

DMN3016LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1415pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.18W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3060pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

IS43TR16128D-125KBLI

IS43TR16128D-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

AFT27S010NT1

AFT27S010NT1

NXP

FET RF NCH 65V 2700MHZ PLD1.5W

DG4157DL-T1-E3

DG4157DL-T1-E3

Vishay Siliconix

IC SWITCH SGL SPDT LV SC70-6

IM03GR

IM03GR

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 5VDC

IHLP2525CZERR10M01

IHLP2525CZERR10M01

Vishay Dale

FIXED IND 100NH 32.5A 1.7 MOHM

HX5008NLT

HX5008NLT

Pulse Electronics Network

TRANSFORMER MODULE GIGABIT 1PORT

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

USB4604-1080HN

USB4604-1080HN

Microchip Technology

IC USB HUB/FLASH CTLR 48QFN

LCMXO640C-3TN144C

LCMXO640C-3TN144C

Lattice Semiconductor Corporation

IC FPGA 113 I/O 144TQFP

LM2901M

LM2901M

ON Semiconductor

IC COMPARATOR QUAD 14-SOP

MAX6710JUT+T

MAX6710JUT+T

Maxim Integrated

IC SUPERVISOR MPU SOT23-6

HX5149NLT

HX5149NLT

Pulse Electronics Network

PULSE XFMR 1 CT:1CT TX/RX 360UH