Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
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Transistors - Special Purpose (162)

Records 64,903

Page 1690/2164

Part Number	Description	In Stock
RJK4514DPK-00#T0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 22A TO3P Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock6,570
RJK4518DPK-00#T0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 39A TO3P Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 39A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock5,976
RJK4532DPD-00#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 4A MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,292
RJK4532DPD-E0#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,912
RJK5002DPD-00#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.4A TO92 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 1.2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,790
RJK5006DPD-WS#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,678
RJK5012DPE-00#J3 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A LDPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	In Stock8,352
RJK5012DPP-E0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock7,272
RJK5013DPE-00#J3 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A LDPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 465mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	In Stock6,660
RJK5013DPP-E0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 465mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock2,124
RJK5014DPP-E0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 19A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock2,880
RJK5015DPK-00#T0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 500V 25A TO3P Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock8,928
RJK5015DPM-00#T1 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 25A TO3PFM Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	In Stock2,358
RJK5018DPK-00#T0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 35A TO3P Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock6,696
RJK5020DPK-00#T0 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 40A TO3P Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 118mOhm @ 20A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock8,262
RJK5026DPP-E0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V FET Feature: - Power Dissipation (Max): 28.5W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock2,664
RJK5026DPP-M0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V FET Feature: - Power Dissipation (Max): 28.5W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3 Full Pack	In Stock3,942
RJK5030DPD-00#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 41.7W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,358
RJK5030DPD-01#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 41.7W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,094
RJK5030DPD-02#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 41.7W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,146
RJK5030DPP-M0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 28.5W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3 Full Pack	In Stock2,304
RJK5031DPD-00#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3A MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,266
RJK5031DPD-01#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,716
RJK5033DPD-00#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,768
RJK5033DPP-M0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V FET Feature: - Power Dissipation (Max): 27.4W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3 Full Pack	In Stock7,992
RJK5034DPP-E0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 1.2A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock6,642
RJK5035DPP-E0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 10A TO220 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V FET Feature: - Power Dissipation (Max): 29.5W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock7,434
RJK6002DPD-00#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,662
RJK6002DPD-WS#J2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH MP3A Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,830
RJK6002DPH-E0#T2 Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A TO251 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,574

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