RJK5014DPP-E0#T2
For Reference Only
| Part Number | RJK5014DPP-E0#T2 |
| PNEDA Part # | RJK5014DPP-E0-T2 |
| Description | MOSFET N-CH 500V 19A TO220 |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 2,880 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
RJK5014DPP-E0#T2 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
|
| Mfr. Part Number | RJK5014DPP-E0#T2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RJK5014DPP-E0#T2 Datasheet
- where to find RJK5014DPP-E0#T2
- Renesas Electronics America
- Renesas Electronics America RJK5014DPP-E0#T2
- RJK5014DPP-E0#T2 PDF Datasheet
- RJK5014DPP-E0#T2 Stock
- RJK5014DPP-E0#T2 Pinout
- Datasheet RJK5014DPP-E0#T2
- RJK5014DPP-E0#T2 Supplier
- Renesas Electronics America Distributor
- RJK5014DPP-E0#T2 Price
- RJK5014DPP-E0#T2 Distributor
RJK5014DPP-E0#T2 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 9.5A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 15V FET Feature - Power Dissipation (Max) 2.2W (Ta), 36W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 42A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 25V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 21A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 50V FET Feature - Power Dissipation (Max) 144W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Microchip Technology Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Current - Continuous Drain (Id) @ 25°C 250mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 8Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) |
