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RJK6002DPD-00#J2

RJK6002DPD-00#J2

For Reference Only

Part Number RJK6002DPD-00#J2
PNEDA Part # RJK6002DPD-00-J2
Description MOSFET N-CH 600V 2A MP3A
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,662
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK6002DPD-00#J2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK6002DPD-00#J2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK6002DPD-00#J2, RJK6002DPD-00#J2 Datasheet (Total Pages: 9, Size: 107.2 KB)
PDFRJK6002DPD-00#J2 Datasheet Cover
RJK6002DPD-00#J2 Datasheet Page 2 RJK6002DPD-00#J2 Datasheet Page 3 RJK6002DPD-00#J2 Datasheet Page 4 RJK6002DPD-00#J2 Datasheet Page 5 RJK6002DPD-00#J2 Datasheet Page 6 RJK6002DPD-00#J2 Datasheet Page 7 RJK6002DPD-00#J2 Datasheet Page 8 RJK6002DPD-00#J2 Datasheet Page 9

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RJK6002DPD-00#J2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds165pF @ 25V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMP-3A
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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