Transistors

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Records 64,903

Page 1681/2164

Part Number	Description	In Stock
RCJ050N25TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 5A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock13,974
RCJ081N20TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 8A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,768
RCJ100N25TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 10A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,904
RCJ120N20TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 12A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 325mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,974
RCJ120N25TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 12A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,654
RCJ160N20TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 16A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,660
RCJ200N20TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 20A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,202
RCJ220N25TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 22A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,556
RCJ300N20TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 30A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock23,784
RCJ330N25TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 33A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock12,276
RCJ450N20TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 45A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,562
RCJ510N25TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 51A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock21,000
RCJ700N20TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 70A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V FET Feature: - Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,464
RCX050N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 5A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1100mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock3,870
RCX051N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 5A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock8,262
RCX080N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 8A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,524
RCX081N20 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 8A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 770mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock8,244
RCX100N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 10A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock11,256
RCX120N20 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 12A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 325mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock5,058
RCX120N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 12A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock6,900
RCX160N20 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 16A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock8,760
RCX200N20 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 20A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,632
RCX220N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 22A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,656
RCX300N20 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 30A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,254
RCX330N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 33A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock2,052
RCX450N20 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 45A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock10,152
RCX510N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 51A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock21,156
RCX511N25 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 51A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock9,468
RCX700N20 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 70A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock9,396
RD3G400GNTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RD3G400GN IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 20V FET Feature: - Power Dissipation (Max): 26W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock20,538

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