Transistors

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Records 64,903

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Part Number	Description	In Stock
R6020JNXC7G Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6020JNX IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 76W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,362
R6020JNZ4C13 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6020JNZ4 IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 252W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	In Stock3,042
R6020JNZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6020JNZ IS A POWER MOSFET FOR S Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V FET Feature: - Power Dissipation (Max): 76W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock8,748
R6020KNJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 20A POWER MOSFET Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V FET Feature: - Power Dissipation (Max): 231W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,428
R6020KNX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 68W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock14,292
R6020KNZ1C9 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 20A POWER MOSFET Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V FET Feature: - Power Dissipation (Max): 231W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock15,036
R6020KNZ4C13 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 20A POWER MOSFET. R602 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V FET Feature: - Power Dissipation (Max): 231W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,524
R6020KNZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 20A TO3PF Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V FET Feature: - Power Dissipation (Max): 68W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock8,688
R6020PNJFRATL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6020PNJFRA IS THE HIGH RELIABIL Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V FET Feature: - Power Dissipation (Max): 304W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,806
R6024ENJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,474
R6024ENX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,620
R6024ENZ1C9 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A TO247 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V FET Feature: - Power Dissipation (Max): 120W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock7,452
R6024ENZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A TO3PF Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V FET Feature: - Power Dissipation (Max): 120W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock9,636
R6024KNJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 24A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,182
R6024KNX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A TO220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock10,140
R6024KNZ1C9 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 24A TO247 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock8,796
R6024KNZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 24A TO3PF Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock9,912
R6025ANZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO3PF Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock6,156
R6025FNZ1C9 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO247 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock15,300
R6025FNZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO3PF Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock8,280
R6025JNXC7G Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6025JNX IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Vgs(th) (Max) @ Id: 7V @ 4.5mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 100V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock5,598
R6025JNZ4C13 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6025JNZ4 IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Vgs(th) (Max) @ Id: 7V @ 4.5mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 100V FET Feature: - Power Dissipation (Max): 306W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	In Stock6,084
R6025JNZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 25A POWER MOSFET; R6025 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V Vgs(th) (Max) @ Id: 7V @ 4.5mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 100V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock6,660
R6030ENX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,236
R6030ENZ1C9 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO247 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V FET Feature: - Power Dissipation (Max): 120W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock6,360
R6030ENZ4C13 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 30A POWER MOSFET. R603 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V FET Feature: - Power Dissipation (Max): 305W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock3,546
R6030ENZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO3PF Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V FET Feature: - Power Dissipation (Max): 120W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock8,004
R6030JNZ4C13 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6030JNZ4 IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 7V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	In Stock5,688
R6030JNZC8 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 30A POWER MOSFET; R6030 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 7V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V FET Feature: - Power Dissipation (Max): 93W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock4,554
R6030KNX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V FET Feature: - Power Dissipation (Max): 86W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,692

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