RCX120N25
For Reference Only
Part Number | RCX120N25 |
PNEDA Part # | RCX120N25 |
Description | MOSFET N-CH 250V 12A TO-220FM |
Manufacturer | Rohm Semiconductor |
Unit Price | Request a Quote |
In Stock | 6,900 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
RCX120N25 Resources
Brand | Rohm Semiconductor |
ECAD Module | |
Mfr. Part Number | RCX120N25 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RCX120N25 Datasheet
- where to find RCX120N25
- Rohm Semiconductor
- Rohm Semiconductor RCX120N25
- RCX120N25 PDF Datasheet
- RCX120N25 Stock
- RCX120N25 Pinout
- Datasheet RCX120N25
- RCX120N25 Supplier
- Rohm Semiconductor Distributor
- RCX120N25 Price
- RCX120N25 Distributor
RCX120N25 Specifications
Manufacturer | Rohm Semiconductor |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 2.23W (Ta), 40W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Microsemi Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/555 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 800mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-39 Package / Case TO-205AF Metal Can |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |