Transistors

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Records 64,903

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Part Number	Description	In Stock
R6006JND3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 6A POWER MOSFET. R6006 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V FET Feature: - Power Dissipation (Max): 86W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,406
R6006JNJGTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6006JNJ IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V FET Feature: - Power Dissipation (Max): 86W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock20,352
R6006JNXC7G Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 6A POWER MOSFET. R6006 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id: 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V FET Feature: - Power Dissipation (Max): 43W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	In Stock4,536
R6006KND3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 6A POWER MOSFET. R6006 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 70W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,718
R6007END3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 7A POWER MOSFET. POWER Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 62mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V FET Feature: - Power Dissipation (Max): 78W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,826
R6007ENJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,204
R6007ENX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,548
R6007JND3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6007JND3 IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 100V FET Feature: - Power Dissipation (Max): 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,686
R6007JNJGTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6007JNJ IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 100V FET Feature: - Power Dissipation (Max): 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,228
R6007JNXC7G Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6007JNX IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 100V FET Feature: - Power Dissipation (Max): 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock21,210
R6007KNJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 7A TO263 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V FET Feature: - Power Dissipation (Max): 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,894
R6007KNX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V FET Feature: - Power Dissipation (Max): 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock9,756
R6008ANX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock14,280
R6008FNJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8A LPTS Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock13,056
R6008FNX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock16,308
R6009END3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 9A POWER MOSFET. POWER Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,580
R6009ENJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,124
R6009ENX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock8,256
R6009JND3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6009JND3 IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1.38mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 100V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,496
R6009JNJGTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6009JNJ IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1.38mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 100V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,022
R6009JNXC7G Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6009JNX IS A POWER MOSFET WITH Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1.38mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 100V FET Feature: - Power Dissipation (Max): 53W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock18,864
R6009KNJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 9A TO263 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,550
R6009KNX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9A TO220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock9,264
R6010ANX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock15,540
R6011END3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 11A POWER MOSFET. POWE Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V FET Feature: - Power Dissipation (Max): 124W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,096
R6011ENJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A LPT Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (D2PAK) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,328
R6011ENX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO220 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock7,428
R6011KND3TL1 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 11A POWER MOSFET. POWE Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V FET Feature: - Power Dissipation (Max): 124W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,366
R6011KNJTL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 11A TO263 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V FET Feature: - Power Dissipation (Max): 124W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,552
R6011KNX Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO220FM Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V FET Feature: - Power Dissipation (Max): 53W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	In Stock11,928

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