NVMJS1D2N04CLTWG
For Reference Only
Part Number | NVMJS1D2N04CLTWG |
PNEDA Part # | NVMJS1D2N04CLTWG |
Description | T6 40V LL LFPAK |
Manufacturer | ON Semiconductor |
Unit Price | Request a Quote |
In Stock | 2,340 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
NVMJS1D2N04CLTWG Resources
Brand | ON Semiconductor |
ECAD Module | |
Mfr. Part Number | NVMJS1D2N04CLTWG |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NVMJS1D2N04CLTWG Datasheet
- where to find NVMJS1D2N04CLTWG
- ON Semiconductor
- ON Semiconductor NVMJS1D2N04CLTWG
- NVMJS1D2N04CLTWG PDF Datasheet
- NVMJS1D2N04CLTWG Stock
- NVMJS1D2N04CLTWG Pinout
- Datasheet NVMJS1D2N04CLTWG
- NVMJS1D2N04CLTWG Supplier
- ON Semiconductor Distributor
- NVMJS1D2N04CLTWG Price
- NVMJS1D2N04CLTWG Distributor
NVMJS1D2N04CLTWG Specifications
Manufacturer | ON Semiconductor |
Series | Automotive, AEC-Q101 |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 237A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.2mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 128W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-LFPAK |
Package / Case | 8-PowerSMD, Gull Wing |
The Products You May Be Interested In
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 19A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 25V FET Feature - Power Dissipation (Max) 240W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 160mOhm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 37mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 50V FET Feature - Power Dissipation (Max) 2.5W (Ta), 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Infineon Technologies Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 27A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HWSON (3.3x3.3) Package / Case 8-PowerVDFN |