Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1558/2164

Part Number	Description	In Stock
JANTX2N7228U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock5,601
JANTX2N7236 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 18A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/595 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock214
JANTX2N7236U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 18A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/595 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock3,708
JANTXV2N6756 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 14A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/542 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	In Stock8,442
JANTXV2N6758 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/542 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	In Stock6,930
JANTXV2N6760 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/542 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	In Stock4,950
JANTXV2N6762 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/542 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	In Stock3,312
JANTXV2N6764 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 38A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock7,848
JANTXV2N6764T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 38A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock2,556
JANTXV2N6766 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	In Stock55
JANTXV2N6766T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock2,088
JANTXV2N6768 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE (TO-3) Package / Case: TO-204AE	In Stock4,644
JANTXV2N6768T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock7,830
JANTXV2N6770 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE (TO-3) Package / Case: TO-204AE	In Stock3,816
JANTXV2N6770T1 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/543 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock6,354
JANTXV2N6782 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3.5A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/556 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock4,770
JANTXV2N6782U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3.5A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/556 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock6,390
JANTXV2N6784 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/556 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock3,096
JANTXV2N6784U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/556 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock3,510
JANTXV2N6788 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 6A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/555 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock3,580
JANTXV2N6788U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.5A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/555 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock6,066
JANTXV2N6790 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/555 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock3,454
JANTXV2N6790U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/555 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock7,524
JANTXV2N6796 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock2,502
JANTXV2N6796U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.51nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock2,718
JANTXV2N6798 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock422
JANTXV2N6798U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock8,910
JANTXV2N6800 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock3,546
JANTXV2N6800U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock6,948
JANTXV2N6802 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock4,230

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