Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1559/2164

Part Number	Description	In Stock
JANTXV2N6802U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/557 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock6,102
JANTXV2N6804 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 11A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/562 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	In Stock4,086
JANTXV2N6849 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.5A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/564 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock7,290
JANTXV2N6849U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.5A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/564 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	In Stock7,704
JANTXV2N6898 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 100V 25A TO3 Manufacturer: Microsemi Corporation Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 15.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AA, TO-3	In Stock3,996
JANTXV2N6901 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.69A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/570 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 8.33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	In Stock6,282
JANTXV2N7224 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 34A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock275
JANTXV2N7224U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 34A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock3,418
JANTXV2N7225 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock3,955
JANTXV2N7225U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock6,768
JANTXV2N7227 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock2,178
JANTXV2N7227U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock6,570
JANTXV2N7228 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock3,852
JANTXV2N7228U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/592 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock8,568
JANTXV2N7236 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 18A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/595 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	In Stock4,752
JANTXV2N7236U Microsemi	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 18A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/595 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	In Stock5,922
KGF12N05-400-SP Renesas Electronics America Inc.	Transistors - FETs, MOSFETs - Single IC MOSFET N-CH Manufacturer: Renesas Electronics America Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 3.5V Vgs (Max): ±5.5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 5.5V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP (1.47x1.47) Package / Case: 6-SMD, No Lead	In Stock4,482
LND01K1-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 9V 330MA SOT23-5 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 9V Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): +0.6V, -12V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 5V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-5 Package / Case: SC-74A, SOT-753	In Stock2,934
LND150K1-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 0.013A SOT23-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock155,172
LND150N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock21,192
LND150N3-G-P002 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock8,820
LND150N3-G-P003 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock5,256
LND150N3-G-P013 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock6,354
LND150N3-G-P014 Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30MA TO92-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock2,862
LND150N8-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30MA SOT89-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	In Stock31,872
LND250K1-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 0.013A SOT23-3 Manufacturer: Microchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock46,038
LP0701LG-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 16.5V 0.7A 8SOIC Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V Vgs(th) (Max) @ Id: 1V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,376
LP0701N3-G Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 16.5V 0.5A TO92-3 Manufacturer: Microchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V FET Feature: - Power Dissipation (Max): 1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock12,798
LSIC1MO120E0080 Littelfuse	Transistors - FETs, MOSFETs - Single MOSFET SIC 1200V 39A TO247-3 Manufacturer: Littelfuse Inc. Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 20V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 800V FET Feature: - Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock3,852
LSIC1MO120E0120 Littelfuse	Transistors - FETs, MOSFETs - Single SIC MOSFET 1200V 27A TO247-3 Manufacturer: Littelfuse Inc. Series: - FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V Vgs(th) (Max) @ Id: 4V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 800V FET Feature: - Power Dissipation (Max): 139W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock17,532

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