Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1537/2164

Part Number	Description	In Stock
IXTK8N150L IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 8A TO-264 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V Vgs(th) (Max) @ Id: 8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V FET Feature: - Power Dissipation (Max): 700W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	In Stock14,760
IXTK90N15 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 90A TO-264 Manufacturer: IXYS Series: MegaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	In Stock7,524
IXTK90N25L2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 90A TO-264 Manufacturer: IXYS Series: Linear L2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	In Stock7,434
IXTK90P20P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 90A TO-264 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	In Stock6,840
IXTL2N450 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4500V 2A I5PAK Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V FET Feature: - Power Dissipation (Max): 220W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak™ Package / Case: ISOPLUSi5-Pak™	In Stock1,710
IXTL2N470 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4700V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V FET Feature: - Power Dissipation (Max): 220W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak™ Package / Case: ISOPLUSi5-Pak™	In Stock7,146
IXTM10P60 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,148
IXTM11N80 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock5,166
IXTM11P50 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,794
IXTM12N100 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock2,592
IXTM1316 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,196
IXTM15N60 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,202
IXTM1630 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,076
IXTM1712 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,318
IXTM21N50L IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,042
IXTM24N50L IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,552
IXTM35N30 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock6,102
IXTM40N30 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock7,200
IXTM50N20 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock7,092
IXTM5N100 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock6,984
IXTM5N100A IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock5,922
IXTM67N10 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock6,642
IXTM6N90A IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock6,534
IXTM9226 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,894
IXTN102N65X2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 76A X2 SOT-227 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V FET Feature: - Power Dissipation (Max): 595AW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock6,324
IXTN110N20L2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 100A SOT-227 Manufacturer: IXYS Series: Linear L2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V FET Feature: - Power Dissipation (Max): 735W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock6,336
IXTN120N25 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 120A SOT-227 Manufacturer: IXYS Series: MegaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V FET Feature: - Power Dissipation (Max): 730W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock8,460
IXTN120P20T IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 106A SOT-227 Manufacturer: IXYS Series: TrenchP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V FET Feature: - Power Dissipation (Max): 830W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock6,642
IXTN170P10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 170A SOT227 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock7,896
IXTN17N120L IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 15A SOT-227B Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	In Stock5,040

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