Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 1536/2164
Image
Part Number
Description
In Stock
Quantity
IXTK140N30P

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 140A TO-264

  • Manufacturer: IXYS
  • Series: Polar™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock7,272
IXTK150N15P

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 150A TO-264

  • Manufacturer: IXYS
  • Series: PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 714W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock5,814
IXTK160N20
IXTK160N20

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 160A TO-264

  • Manufacturer: IXYS
  • Series: MegaMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 415nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock3,168
IXTK170N10P

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 170A TO-264

  • Manufacturer: IXYS
  • Series: Polar™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 715W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock2,592
IXTK170P10P

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 100V 170A TO-264

  • Manufacturer: IXYS
  • Series: PolarP™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock3,942
IXTK17N120L

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 17A TO-264

  • Manufacturer: IXYS
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock4,644
IXTK180N15
IXTK180N15

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 180A TO-264

  • Manufacturer: IXYS
  • Series: MegaMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock7,686
IXTK180N15P

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 180A TO-264

  • Manufacturer: IXYS
  • Series: PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock5,040
IXTK200N10L2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 200A TO-264

  • Manufacturer: IXYS
  • Series: Linear L2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock6,138
IXTK200N10P

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 200A TO-264

  • Manufacturer: IXYS
  • Series: PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock6,516
IXTK20N150
IXTK20N150

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1500V 20A TO-264

  • Manufacturer: IXYS
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock2,862
IXTK210P10T

Transistors - FETs, MOSFETs - Single

MOSFET P-CH -100V -210A TO-264

  • Manufacturer: IXYS
  • Series: *
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock8,424
IXTK21N100
IXTK21N100

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 21A TO-264

  • Manufacturer: IXYS
  • Series: MegaMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock4,302
IXTK22N100L

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 22A TO-264

  • Manufacturer: IXYS
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock2,016
IXTK240N075L2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

  • Manufacturer: IXYS
  • Series: Linear L2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 546nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
In Stock4,356
IXTK250N10
IXTK250N10

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 250A TO-264AA

  • Manufacturer: IXYS
  • Series: MegaMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock3,222
IXTK32P60P
IXTK32P60P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 600V 32A TO-264

  • Manufacturer: IXYS
  • Series: PolarP™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock8,334
IXTK33N50
IXTK33N50

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 33A TO-264

  • Manufacturer: IXYS
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 416W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock4,662
IXTK400N15X4

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 400A TO-264

  • Manufacturer: IXYS
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1500W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
In Stock8,352
IXTK40P50P
IXTK40P50P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 500V 40A TO-264

  • Manufacturer: IXYS
  • Series: PolarP™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock16,218
IXTK46N50L
IXTK46N50L

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 46A TO-264

  • Manufacturer: IXYS
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
  • Vgs(th) (Max) @ Id: 6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 15V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock5,580
IXTK550N055T2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 550A TO-264

  • Manufacturer: IXYS
  • Series: FRFET®, SupreMOS®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock3,510
IXTK5N250
IXTK5N250

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 2500V 5A TO264

  • Manufacturer: IXYS
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock5,364
IXTK600N04T2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 600A TO-264

  • Manufacturer: IXYS
  • Series: FRFET®, SupreMOS®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock2,502
IXTK60N50L2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 60A TO-264

  • Manufacturer: IXYS
  • Series: Linear L2™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock6,984
IXTK62N25
IXTK62N25

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 62A TO-264

  • Manufacturer: IXYS
  • Series: MegaMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock2,358
IXTK75N30
IXTK75N30

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 75A TO-264

  • Manufacturer: IXYS
  • Series: MegaMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock7,776
IXTK80N25
IXTK80N25

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 80A TO-264

  • Manufacturer: IXYS
  • Series: MegaMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock3,526
IXTK82N25P
IXTK82N25P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 82A TO-264

  • Manufacturer: IXYS
  • Series: PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock4,428
IXTK88N30P
IXTK88N30P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 88A TO-264

  • Manufacturer: IXYS
  • Series: PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
In Stock2,016