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IXTN120P20T

IXTN120P20T

For Reference Only

Part Number IXTN120P20T
PNEDA Part # IXTN120P20T
Description MOSFET P-CH 200V 106A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN120P20T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN120P20T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN120P20T, IXTN120P20T Datasheet (Total Pages: 6, Size: 182.26 KB)
PDFIXTN120P20T Datasheet Cover
IXTN120P20T Datasheet Page 2 IXTN120P20T Datasheet Page 3 IXTN120P20T Datasheet Page 4 IXTN120P20T Datasheet Page 5 IXTN120P20T Datasheet Page 6

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IXTN120P20T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C106A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs740nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds73000pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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