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IXTK200N10L2

IXTK200N10L2

For Reference Only

Part Number IXTK200N10L2
PNEDA Part # IXTK200N10L2
Description MOSFET N-CH 100V 200A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTK200N10L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTK200N10L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTK200N10L2, IXTK200N10L2 Datasheet (Total Pages: 5, Size: 133.8 KB)
PDFIXTX200N10L2 Datasheet Cover
IXTX200N10L2 Datasheet Page 2 IXTX200N10L2 Datasheet Page 3 IXTX200N10L2 Datasheet Page 4 IXTX200N10L2 Datasheet Page 5

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IXTK200N10L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs540nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264 (IXTK)
Package / CaseTO-264-3, TO-264AA

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